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ORCIDAndreas Martin 0002
Person information
- affiliation: Infineon Technologies AG, Corporate reliability department, Neubiberg, Germany
Other persons with the same name
- Andreas Martin — disambiguation page
- Andreas Martin 0001
![[0000-0002-7909-7663]](https://dblp.uni-trier.de./img/orcid-mark.12x12.png "0000-0002-7909-7663")
— FHNW University of Applied Sciences and Arts Northwestern Switzerland, School of Business, Olten, Switzerland
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2020 – today
- 2022
[c2]Andreas Martin:
Plasma processing induced charging damage (PID) assessment with appropriate fWLR stress methods ensuring expected MOS reliability and lifetimes for automotive products (Invited). IRPS 2022: 5- 2020
- [c1]Andreas Martin, Angelika Kamp:
A New Implementation Approach for Reliability Design Rules against Plasma Induced Charging Damage from Well Configurations of Complex ICs. IRPS 2020: 1-9
2010 – 2019
- 2018
- [j9]D. Beckmeier, Andreas Martin:
Variation-resilient quantifiable plasma process induced damage monitoring. Microelectron. Reliab. 88-90: 152-158 (2018) - 2016
- [j8]Andreas Martin, Rolf-Peter Vollertsen, A. Mitchell, M. Traving, D. Beckmeier, H. Nielen:
Fast wafer level reliability monitoring as a tool to achieve automotive quality for a wafer process. Microelectron. Reliab. 64: 2-12 (2016) - [j7]Christian Schlünder, Jörg Berthold, Fabian Proebster, Andreas Martin, Wolfgang Gustin, Hans Reisinger:
Degradation and recovery of variability due to BTI. Microelectron. Reliab. 64: 179-184 (2016) - [j6]Daniel Beckmeier, Andreas Martin:
Plasma process induced damage detection by fast wafer level reliability monitoring for automotive applications. Microelectron. Reliab. 64: 189-193 (2016)
2000 – 2009
- 2005
- [j5]Andreas Martin:
Reliability of gate dielectrics and metal-insulator-metal capacitors. Microelectron. Reliab. 45(5-6): 834-840 (2005) - 2004
- [j4]Andreas Martin, Rolf-Peter Vollertsen:
An introduction to fast wafer level reliability monitoring for integrated circuit mass production. Microelectron. Reliab. 44(8): 1209-1231 (2004) - 2003
- [j3]Andreas Martin, Jochen von Hagen, Glenn B. Alers:
Ramped current stress for fast and reliable wafer level reliability monitoring of thin gate oxide reliability. Microelectron. Reliab. 43(8): 1215-1220 (2003) - 2001
- [j2]Andreas Martin:
Editorial. Microelectron. Reliab. 41(7): 935 (2001) - [j1]Gunnar Diestel, Andreas Martin, Martin Kerber, Alfred Schlemm, Horst Erlenmaier, Bernhard Murr, Andreas Preussger:
Quality assessment of thin oxides using constant and ramped stress measurements. Microelectron. Reliab. 41(7): 1019-1022 (2001)
Coauthor Index
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