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2020 – today
- 2024
[j10]Qiqiao Wu
, Yue Cao, Qing Luo, Haijun Jiang, Zhongze Han, Yongkang Han, Chunmeng Dou, Hangbing Lv, Qi Liu, Jianguo Yang, Ming Liu:
A 9-Mb HZO-Based Embedded FeRAM With 10-Cycle Endurance and 5/7-ns Read/Write Using ECC-Assisted Data Refresh and Offset-Canceled Sense Amplifier. IEEE J. Solid State Circuits 59(1): 208-218 (2024)- 2023
- [j9]Zhaohao Zhang, Guohui Zhan, Weizhuo Gan, Yan Cheng, Xumeng Zhang, Yue Peng, Jianshi Tang, Fan Zhang, Jiali Huo, Gaobo Xu, Qingzhu Zhang, Zhenhua Wu, Yan Liu, Hangbing Lv, Qi Liu, Genquan Han, Huaxiang Yin, Jun Luo, Wenwu Wang:
Ultralow-Power Compact Artificial Synapse Based on a Ferroelectric Fin Field-Effect Transistor for Spatiotemporal Information Processing. Adv. Intell. Syst. 5(11) (2023) - [j8]Yulin Zhao, Yuan Wang, Donglin Zhang, Zhongze Han, Qiao Hu, Xuanzhi Liu, Qingting Ding, Jinhui Cheng, Wenjun Zhang, Yue Cao, Ruixi Zhou, Qing Luo, Jianguo Yang, Hangbing Lv:
A Hf0.5Zr0.5O2 ferroelectric capacitor-based half-destructive read scheme for computing-in-memory. Sci. China Inf. Sci. 66(5) (2023) - [c8]Jianguo Yang, Qing Luo, Xiaoyong Xue, Haijun Jiang, Qiqiao Wu, Zhongze Han, Yue Cao, Yongkang Han, Chunmeng Dou, Hangbing Lv, Qi Liu, Ming Liu:
A 9Mb HZO-Based Embedded FeRAM with 1012-Cycle Endurance and 5/7ns Read/Write using ECC-Assisted Data Refresh and Offset-Canceled Sense Amplifier. ISSCC 2023: 498-499 - 2022
- [j7]Jianguo Yang, Ruijun Lin, Keji Zhou, Yuejun Zhang, Xiaoyong Xue, Hangbing Lv:
A 28 nm 512 Kb adjacent 2T2R RRAM PUF with interleaved cell mirroring and self-adaptive splitting for high density and low BER cryptographic key in IoT devices. Microelectron. J. 128: 105550 (2022) - 2021
- [j6]Qingting Ding, Tiancheng Gong, Jie Yu, Xiaoxin Xu, Xiaoyan Li, Hangbing Lv, Jianguo Yang, Qing Luo, Peng Yuan, Feng Zhang, Ming Liu:
Investigation of weight updating modes on oxide-based resistive switching memory synapse towards neuromorphic computing applications. Sci. China Inf. Sci. 64(11) (2021) - [j5]Keji Zhou, Xiaoyong Xue, Jianguo Yang, Xiaoxin Xu, Hangbing Lv, Ming-e Jing, Jing Li, Xiaoyang Zeng, Ming Liu:
High-Density 3-D Stackable Crossbar 2D2R nvTCAM With Low-Power Intelligent Search for Fast Packet Forwarding in 5G Applications. IEEE J. Solid State Circuits 56(3): 988-1000 (2021) - [c7]Xiaoxin Xu, Wenxuan Sun, Jie Yu, Jinru Lai, Danian Dong, Hangbing Lv:
Scaling Potential Analysis for the CMOS Compatible Ox-RRAM. IMW 2021: 1-4 - [c6]Jianguo Yang, Xiaoyong Xue, Xiaoxin Xu, Qiao Wang, Haijun Jiang, Jie Yu, Danian Dong, Feng Zhang, Hangbing Lv, Ming Liu:
24.2 A 14nm-FinFET 1Mb Embedded 1T1R RRAM with a 0.022µ m2 Cell Size Using Self-Adaptive Delayed Termination and Multi-Cell Reference. ISSCC 2021: 336-338 - 2020
- [j4]Xianbao Bu, Han Xu, Dashan Shang, Yue Li, Hangbing Lv, Qi Liu:
Ion-Gated Transistor: An Enabler for Sensing and Computing Integration. Adv. Intell. Syst. 2(12): 2000156 (2020) - [j3]Chao Liu, Jianguo Yang, Pengfei Jiang, Qiao Wang, Donglin Zhang, Tiancheng Gong, Qingting Ding, Yuling Zhao, Qing Luo, Xiaoyong Xue, Hangbing Lv, Ming Liu:
A Low Power 4T2C nvSRAM With Dynamic Current Compensation Operation Scheme. IEEE Trans. Very Large Scale Integr. Syst. 28(11): 2469-2473 (2020) - [c5]Jianguo Yang, Xiaoyong Xue, Xiaoxin Xu, Hangbing Lv, Feng Zhang, Xiaoyang Zeng, Meng-Fan Chang, Ming Liu:
A 28nm 1.5Mb Embedded 1T2R RRAM with 14.8 Mb/mm2 using Sneaking Current Suppression and Compensation Techniques. VLSI Circuits 2020: 1-2
2010 – 2019
- 2019
- [j2]Jiahao Yin, Chunmeng Dou, Danian Dong, Jie Yu, Xiaoxin Xu, Qing Luo, Tiancheng Gong, Lu Tai, Peng Yuan, Xiaoyong Xue, Ming Liu, Hangbing Lv:
A 0.75 V reference clamping sense amplifier for low-power high-density ReRAM with dynamic pre-charge technique. IEICE Electron. Express 16(12): 20190201 (2019) - [c4]Jianguo Yang, Xiaowen Li, Qingting Ding, Xiaoyong Xue, Xiaoxin Xu, Qing Luo, Hangbing Lv, Ming Liu:
A High Reliability 500 µW Resistance-to-Digital Interface Circuit for SnO2 Gas Sensor IoT Applications. ASICON 2019: 1-4 - [c3]Xiaoyong Xue, Jianguo Yang, Yuejun Zhang, Mingyu Wang, Hangbing Lv, Xiaoyang Zeng, Ming Liu:
A 28nm 512Kb adjacent 2T2R RRAM PUF with interleaved cell mirroring and self-adaptive splitting for extremely low bit error rate of cryptographic key. A-SSCC 2019: 29-32 - [p1]Ming Liu, Qi Liu, Hangbing Lv, Shibing Long:
Resistive Switching Devices: Mechanism, Performance and Integration. Handbook of Memristor Networks 2019: 843-911 - 2018
- [c2]Keji Zhou, Xiaoyong Xue, Jianguo Yang, Xiaoxin Xu, Hangbing Lv, Mingyu Wang, Ming-e Jing, Wenjun Liu, Xiaoyang Zeng, Steve S. Chung, Jing Li, Ming Liu:
Nonvolatile Crossbar 2D2R TCAM with Cell Size of 16.3 F2 and K-means Clustering for Power Reduction. A-SSCC 2018: 135-138 - 2017
- [c1]Xiaowei Han, Qian Jia, Hongbin Sun, Longfei Wang, Huaqiang Wu, Yimao Cai, Feng Zhang, Yongyi Xie, Fangxu Dong, Xiaoguang Wang, Xiaofei Xue, Li Pang, Xiaoqing Zhao, Mengnan Wu, Pu Bai, Qi Liu, Hangbing Lv, Bing Yu, Chao Zhao, He Qian, Ru Huang, Ming Liu, Yumei Zhou, Nanning Zheng, Qiwei Ren:
A 0.13μm 64Mb HfOx ReRAM using configurable ramped voltage write and low read-disturb sensing techniques for reliability improvement. CICC 2017: 1-4
2000 – 2009
- 2006
- [j1]Hangbing Lv, Peng Zhou, Yinyin Lin, Tingao Tang, Baowei Qiao, Yunfeng Lai, Jie Feng, Bingchu Cai, Bomy Chen:
Electronic properties of GST for non-volatile memory. Microelectron. J. 37(9): 982-984 (2006)
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