"A 9-Mb HZO-Based Embedded FeRAM With 10-Cycle Endurance and 5/7-ns ..."

Qiqiao Wu et al. (2024)

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DOI: 10.1109/JSSC.2023.3320659

access: closed

type: Journal Article

metadata version: 2024-01-13

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Qiqiao Wu, Yue Cao, Qing Luo, Haijun Jiang, Zhongze Han, Yongkang Han, Chunmeng Dou, Hangbing Lv, Qi Liu, Jianguo Yang, Ming Liu:
A 9-Mb HZO-Based Embedded FeRAM With 10-Cycle Endurance and 5/7-ns Read/Write Using ECC-Assisted Data Refresh and Offset-Canceled Sense Amplifier. IEEE J. Solid State Circuits 59(1): 208-218 (2024)

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