"A 0.13μm 64Mb HfOx ReRAM using configurable ramped voltage write and ..."

Xiaowei Han et al. (2017)

> Home

Details and statistics

DOI: 10.1109/CICC.2017.7993685

access: closed

type: Conference or Workshop Paper

metadata version: 2024-06-04

- view
  - electronic edition via DOI
  - unpaywalled version
  authority control:
- export record
  dblp key:
  - conf/cicc/HanJSWWCZXDWXPZ17
- ask others
- share record
  persistent URL:
  - https://dblp.org/rec/conf/cicc/HanJSWWCZXDWXPZ17
Xiaowei Han, Qian Jia, Hongbin Sun, Longfei Wang, Huaqiang Wu, Yimao Cai, Feng Zhang, Yongyi Xie, Fangxu Dong, Xiaoguang Wang, Xiaofei Xue, Li Pang, Xiaoqing Zhao, Mengnan Wu, Pu Bai, Qi Liu, Hangbing Lv, Bing Yu, Chao Zhao, He Qian, Ru Huang, Ming Liu, Yumei Zhou, Nanning Zheng, Qiwei Ren:
A 0.13μm 64Mb HfOx ReRAM using configurable ramped voltage write and low read-disturb sensing techniques for reliability improvement. CICC 2017: 1-4

manage site settings

To protect your privacy, all features that rely on external API calls from your browser are turned off by default. You need to opt-in for them to become active. All settings here will be stored as cookies with your web browser. For more information see our F.A.Q.