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Publication search results
found 26 matches
- 2024
- Muhammad Abrar Akram, Ibrar Ali Wahla, Bo-Hyeon Lee, In-Chul Hwang:
A 65-nm duty-cycle corrector achieving 10% to 90% duty-correction range with 0.86% duty-cycle error. Microelectron. J. 150: 106267 (2024) - I. Naurin Bahadur, Lakshmi Boppana:
Efficient architecture for ocular artifacts removal from EEG: A Novel approach based on DWT-LMM. Microelectron. J. 150: 106284 (2024) - Sudipta Chakraborty, Anand K. Verma:
Compact high attenuation wide rejection bandwidth 5-pole Butterworth LPF using transmission zeros in GaAs process. Microelectron. J. 150: 106263 (2024) - Rui Chen, Huiyong Hu, Xinlong Shi, Ruizhe Han, Peijian Zhang, Tao Liu, Liming Wang:
Design and application of germanium based complementary TFET devices with step tunneling paths. Microelectron. J. 150: 106136 (2024) - Huali Duan, Erping Li, Qinyi Huang, Yuehang Xu, Wenchao Chen:
Multiphysics simulation study of thermal stress effects in nanoscale FinFETs heterogeneously integrated with GaN high-power device on silicon substrate. Microelectron. J. 150: 106286 (2024) - Kewei Hu, Zhong Tang, Nianxiong Nick Tan, Xiao-peng Yu:
A 6 ppm/°C capacitively-biased diode based novel bandgap circuit with driving capability and calibration. Microelectron. J. 150: 106283 (2024) - Gongxing Huang, Cong Wei, Rongshan Wei:
A 94.5-dB SNDR 96.5-dB DR discrete-time delta-sigma modulator using FIA assisted OTA and FIR DAC feedback. Microelectron. J. 150: 106278 (2024) - Yixun Jiang, Qingfeng Kong, Ming Qiao, Yin Guo, Yuxi Tang, Xinxin Liu, Sen Zhang, Bo Zhang:
A novel SPICE model of shorted-anode lateral insulated-gate bipolar transistor. Microelectron. J. 150: 106268 (2024) - Moufu Kong, Hongfei Deng, Yingzhi Luo, Jiayan Zhu, Bo Yi, Hongqiang Yang, Qiang Hu, Fanxin Meng:
Investigations of SiC lateral MOSFET with high-k and equivalent variable lateral doping techniques. Microelectron. J. 150: 106261 (2024) - Chunyan Liu, Yao Li, Cailin Wang:
Thermal characteristics analysis of Ga2O3 and GaN devices on different substrates. Microelectron. J. 150: 106266 (2024) - Sujuan Liu, Kun Liu, Zifeng Xing, Aoran Ge, Peiyuan Wan:
A fast-response RBCOT buck converter with second-order differential and integrator compensation based on FVF. Microelectron. J. 150: 106249 (2024) - Chongbin Liu, Xiangyang Wang, Guoqiang Wu:
Investigation of performance dependence on transduction diaphragm design for piezoelectric micromachined ultrasonic transducers. Microelectron. J. 150: 106260 (2024) - Xiaorong Luo, Linyao Hao, Yuxi Wei, Kaiwei Dai, Xiaosong Peng, Zhuolin Jiang, Yuxin Wu:
High breakdown voltage β-Ga2O3 Schottky barrier diode with fluorine-implanted termination. Microelectron. J. 150: 106269 (2024) - Jin-Jie Lv, Hao Liu, Guodong Su, Cheng-Xiang Wang, Jiang-Tao Su, Jun Liu:
A FI-SPDT with high isolation based on design method of transfer function. Microelectron. J. 150: 106255 (2024) - Changkai Pan, Mengwei Li, Qiannan Wu:
Design and preparation of L-band multilayer low-group delay filter based on inner sputtering. Microelectron. J. 150: 106279 (2024) - Kefan Qin, Weibo Hu, Xiang Yan, Shangzheng Yang, Haitao Cui, Meiyu Wang:
A hybrid SAR ADC with input range extension. Microelectron. J. 150: 106259 (2024) - E. Rajalakshmi, N. B. Balamurugan, M. Hemalatha, M. Suguna:
A Novel high-voltage DMG Fe-doped AlGaN/AlN/GaN HEMTs with sheet charge density model. Microelectron. J. 150: 106285 (2024) - Bhartipudi Sahishnavi, Arnab Dey, Anubhab Banerjee, Andleeb Zahra, Zia Abbas:
A 275 pW, 0.5 V supply insensitive gate-leakage based current/voltage reference circuit for a wide temperature range of -55 to 100 °C without using amplifiers and resistors. Microelectron. J. 150: 106277 (2024) - Guangao Wang, Qi Xiao, Haigang Feng, Jie Hu, Jingjing Dong, Jie Yang:
Analysis and design of a 0.9 V 1 GHz-BW 14.6 dBm-OIP3 broadband receiver with current-mode analog baseband in 12 nm FinFET CMOS. Microelectron. J. 150: 106288 (2024) - Wenrun Xiao, Yanping Qiao, Xianming Liu, Xiaofeng Chen, Chao Huang, Donghui Guo:
A wideband inductorless LNA utilizing common-source noise-canceling and cascode configuration. Microelectron. J. 150: 106252 (2024) - Xuefei Xuan, Zhiqun Cheng, Haifeng Wu, Zhiwei Zhang, Ziming Zhao, Chao Le, Tinwei Gong, Brendan Hayes:
Analysis of source second-harmonic-controlled wideband extended series of continuous modes power amplifiers. Microelectron. J. 150: 106264 (2024) - Yucheng Yang, Aolong Tan, Shukai Duan, Lidan Wang:
High-performance convolutional neural network emulation via FPGA-integrated memristive circuitry. Microelectron. J. 150: 106247 (2024) - Liyan Yi, Jingjie Wei, Xiaojin Zhao, Xian Tang:
A power-efficient CMOS image sensor with current-mode 1-bit log-gradient feature extractor for always-on object detection. Microelectron. J. 150: 106287 (2024) - Shuanghan Zhao, Jing Gao, Quanmin Chen, Kaiming Nie, Jiangtao Xu:
A 12-bit 2.5-bit/phase two-stage cyclic ADC with phase scaling and low-power Sub-ADC for CMOS image sensor. Microelectron. J. 150: 106282 (2024) - Haodong Zhao, Huizhen Zheng, Shiyue Ma, Keping Wang:
16.2-μW Super Class-AB OTA with current-reuse technique achieving 130.3-μA/μA FoM. Microelectron. J. 150: 106265 (2024) - Mei Zou, Nan Chen, Yuesheng Pu, Libin Yao:
A low-light-level CMOS image sensor with a novel correlated double sampling based on CTIA. Microelectron. J. 150: 106262 (2024)
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