"Investigations of SiC lateral MOSFET with high-k and equivalent variable ..."

Moufu Kong et al. (2024)

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DOI: 10.1016/J.MEJO.2024.106261

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type: Journal Article

metadata version: 2024-08-22

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Moufu Kong, Hongfei Deng, Yingzhi Luo, Jiayan Zhu, Bo Yi, Hongqiang Yang, Qiang Hu, Fanxin Meng:
Investigations of SiC lateral MOSFET with high-k and equivalent variable lateral doping techniques. Microelectron. J. 150: 106261 (2024)

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