"High breakdown voltage β-Ga2O3 Schottky barrier diode with ..."

Xiaorong Luo et al. (2024)

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DOI: 10.1016/J.MEJO.2024.106269

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type: Journal Article

metadata version: 2024-08-22

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Xiaorong Luo, Linyao Hao, Yuxi Wei, Kaiwei Dai, Xiaosong Peng, Zhuolin Jiang, Yuxin Wu:
High breakdown voltage β-Ga2O3 Schottky barrier diode with fluorine-implanted termination. Microelectron. J. 150: 106269 (2024)

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