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found 101 matches

• 2014
• 
  Arjun Ajaykumar, Xing Zhou, Binit Syamal, Siau Ben Chiah:
  Compact Fermi potential model for heterostructure HEMTs with rectangular quantum well. ESSDERC 2014: 266-269
• 
  Kaya Can Akyel, Lorenzo Ciampolini, Olivier Thomas, David Turgis, Gérard Ghibaudo:
  Impact of Random Telegraph Signals on 6T high-density SRAM in 28nm UTBB FD-SOI. ESSDERC 2014: 94-97
• 
  Filippo Alagi, Mattia Rossetti, Roberto Stella, Emanuele Viganò, Philippe Raynaud:
  Compact model for parametric instability under arbitrary stress waveform. ESSDERC 2014: 270-273
• 
  Cem Alper, Pierpaolo Palestri, Livio Lattanzio, Jose L. Padilla, Adrian M. Ionescu:
  Two dimensional quantum mechanical simulation of low dimensional tunneling devices. ESSDERC 2014: 186-189
• 
  Muhammad Alshahed, Zili Yu, Horst Rempp, Harald Richter, Christine Harendt, Joachim N. Burghartz:
  Thermal characterization and modeling of ultra-thin silicon chips. ESSDERC 2014: 397-400
• 
  Stefano Ambrogio, Simone Balatti, Daniele Ielmini, David C. Gilmer:
  Analytical modelling and leakage optimization in complementary resistive switch (CRS) crossbar arrays. ESSDERC 2014: 242-245
• 
  François Andrieu, Mikaël Cassé, E. Baylac, P. Perreau, O. Nier, Denis Rideau, R. Berthelon, Franck Pourchon, A. Pofelski, Barbara De Salvo, C. Gallon, Vincent Mazzocchi, D. Barge, C. Gaumer, O. Gourhant, A. Cros, Vincent Barral, Rossella Ranica, Nicolas Planes, Walter Schwarzenbach, E. Richard, Emmanuel Josse, Olivier Weber, Franck Arnaud, Maud Vinet, Olivier Faynot, Michel Haond:
  Strain and layout management in dual channel (sSOI substrate, SiGe channel) planar FDSOI MOSFETs. ESSDERC 2014: 106-109
• 
  Greg Atwood, Scott DeBoer, Kirk Prall, Linda Somerville:
  A semiconductor memory development and manufacturing perspective. ESSDERC 2014: 1-6
• 
  Hiromitsu Awano, Masayuki Hiromoto, Takashi Sato:
  Variability in device degradations: Statistical observation of NBTI for 3996 transistors. ESSDERC 2014: 218-221
• 
  Christopher Lawrence Ayala, Daniel Grogg, Antonios Bazigos, Montserrat Fernandez-Bolaños Badia, Urs Dürig, Michel Despont, Christoph Hagleitner:
  A 6.7 MHz nanoelectromechanical ring oscillator using curved cantilever switches coated with amorphous carbon. ESSDERC 2014: 66-69
• 
  Trong Huynh Bao, Dmitry Yakimets, Julien Ryckaert, Ivan Ciofi, Rogier Baert, Anabela Veloso, Jürgen Bömmels, Nadine Collaert, Philippe Roussel, S. Demuynck, Praveen Raghavan, Abdelkarim Mercha, Zsolt Tokei, Diederik Verkest, Aaron Thean, Piet Wambacq:
  Circuit and process co-design with vertical gate-all-around nanowire FET technology to extend CMOS scaling for 5nm and beyond technologies. ESSDERC 2014: 102-105
• 
  Marco Barbato, Andrea Cester, Viviana Mulloni, Benno Margesin, Giorgio De Pasquale, Aurelio Somà, Gaudenzio Meneghesso:
  Reliability of capacitive RF MEMS switches subjected to repetitive impact cycles at different temperatures. ESSDERC 2014: 70-73
• 
  E. M. Bazizi, Alban Zaka, Tom Herrmann, Francis Benistant, J. H. M. Tin, J. P. Goh, L. Jiang, M. Joshi, H. van Meer, K. Korablev:
  Advanced TCAD for predictive FinFETs Vth mismatch using full 3D process/device simulation. ESSDERC 2014: 341-344
• 
  Guillaume Besnard, Xavier Garros, François Andrieu, Phuong Nguyen, William van den Daele, Patrick Reynaud, Walter Schwarzenbach, Daniel Delprat, Konstantin Bourdelle, Gilles Reimbold, Sorin Cristoloveanu:
  Superior performance and Hot Carrier reliability of Strained FDSOI nMOSFETs for advanced CMOS technology nodes. ESSDERC 2014: 226-229
• 
  Ajay Bhoolokam, Manoj Nag, Adrian Vaisman Chasin, Soeren Steudel, Jan Genoe, Gerwin H. Gelinck, Guido Groeseneken, Paul Heremans:
  Impact of etch stop layer on negative bias illumination stress of amorphous Indium Gallium Zinc Oxide transistors. ESSDERC 2014: 302-304
• 
  Davide Bisi, Antonio Stocco, Matteo Meneghini, Fabiana Rampazzo, Andrea Cester, Gaudenzio Meneghesso, Enrico Zanoni:
  Characterization of high-voltage charge-trapping effects in GaN-based power HEMTs. ESSDERC 2014: 389-392
• 
  Jeroen van den Brand, Margreet de Kok, Ashok Sridhar, Maarten Cauwe, Rik Verplancke, Frederick Bossuyt, Johan de Baets, Jan Vanfleteren:
  Flexible and stretchable electronics for wearable healthcare. ESSDERC 2014: 206-209
• 
  Markus Brummayer, Stefan Fuchshumer:
  Mission Smart Production¹. ESSDERC 2014: 157-159
• 
  Hamilton Carrillo-Nunez, Mathieu Luisier, Andreas Schenk:
  Analysis of InAs-Si heterojunction nanowire tunnel FETs: Extreme confinement vs. bulk. ESSDERC 2014: 118-119
• 
  Andrea Cattaneo, Sandro Pinarello, Jan-Erik Mueller, Robert Weigel:
  MOSFET degradation under DC and RF Fowler-Nordheim stress. ESSDERC 2014: 230-233
• 
  Pengying Chang, Lang Zeng, Xiaoyan Liu, Gang Du:
  Hole mobility in InSb-based devices: Dependency on surface orientation, body thickness and strain. ESSDERC 2014: 122-125
• 
  Isabelle Chartier, Stéphanie Jacob, Michaël Charbonneau, Abdelkader Aliane, Aurelia Plihon, Romain Coppard, Romain Gwoziecki, Jean-Marie Verilhac, Christophe Serbutoviez, Olivier Dhez, Eugenio Cantatore, Fabrice Domingues Dos Santos:
  Printed OTFT complementary circuits and matrix for Smart Sensing Surfaces applications. ESSDERC 2014: 202-205
• 
  Ales Chvála, Daniel Donoval, Lukás Nagy, Juraj Marek, Patrik Pribytny, Marian Molnar:
  3-D electrothermal device/circuit simulation of DC-DC converter module in multi-die IC. ESSDERC 2014: 130-133
• 
  Mauro Ciappa, Emre Ilgünsatiroglu, Alexey Yu. Illarionov, F. Filosomi, C. Santini:
  Monte Carlo modeling of the extraction of roughness parameters at nanometer scale by Critical Dimension Scanning Electron Microscopy. ESSDERC 2014: 357-360
• 
  Dejana Cucak, Miroslav Vasic, Óscar García, Yves Bouvier, Jesús Ángel Oliver, Pedro Alou, José A. Cobos, Ashu Wang, Sara Martin-Horcajo, Fatima Romero, Fernando Calle:
  Physical model for GaN HEMT design optimization in high frequency switching applications. ESSDERC 2014: 393-396
• 
  Gilberto Curatola, Andreas Kassmanhuber, Sergey Yuferev, Jörg Franke, Gianmauro Pozzovivo, Simone Lavanga, Gerhard Prechtl, Thomas Detzel, Oliver Haeberlen:
  GaN virtual prototyping: From traps modeling to system-level cascode optimization. ESSDERC 2014: 337-340
• 
  Nilay Dagtekin, Adrian M. Ionescu:
  Investigation of partially gated Si tunnel FETs for low power integrated optical sensing. ESSDERC 2014: 190-193
• 
  Hal Edwards, Niu Jin, Fan-Chi Hou, Li Jen Choi, Tracey Krakowski, Kuntal Joardar:
  Temperature dependence of threshold voltage fluctuations in CMOS transistors incorporating halo implant. ESSDERC 2014: 413-416
• 
  Olof Engström, Henryk M. Przewlocki, Ivona Z. Mitrovic, Stephen Hall:
  Internal photoemission technique for high-k oxide/semiconductor band offset determination: The influence of semiconductor bulk properties. ESSDERC 2014: 369-372
• 
  Zahra Kolahdouz Esfahani, Teng Ma, Henk W. van Zeijl, G. Q. Zhang, Ali Rostamian, Mohammadreza Kolahdouz:
  Blue selective photodiodes for optical feedback in LED wafer level packages. ESSDERC 2014: 174-177

skipping 71 more matches