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Publication search results
found 69 matches
- 2024
- Jiahao Chen, Kenneth Stephenson, Md Abdullah Mamun, Zehuan Wang, Parthasarathy Seshadri, Asif Khan, Chirag Gupta:
Al0.87Ga0.13N/Al0.64Ga0.36N HFET with fT >17 GHz and Vbr > 360 V. DRC 2024: 1-2 - Sukhrob Abdulazhanov, Q. H. Le, David Lehninger, Ayse Sünbül, Thomas Kämpfe, G. Gerlach:
Improved Tunability of BEoL-integrated Hafnium Zirconium Oxide Varactors for mmWave Applications. DRC 2024: 1-2 - Simon A. Agnew, William J. Scheideler:
Enhancing Electrostatic Control of High-Speed Liquid-Metal-Printed In2O3 TFTs via Ga Doping. DRC 2024: 1-2 - Juhan Ahn, Saroj Satapathy, Jaydeep P. Kulkarni:
Advancing Low-Voltage Complementary Reconfigurable Field-Effect Transistor Operation with Reduced Schottky Barriers. DRC 2024: 1-2 - Md. Hasan Raza Ansari, Nazek El-Atab
:
A Novel Device Design with Enlarged Storage Region for Retention Enhancement of 1T DRAM Cell. DRC 2024: 1-2 - Yiyang Bai, Amita Rawat, Lisa N. McPhillips, M. Saif Islam:
P-on-N versus N-on-P Silicon-Avalanche Photodiode Selection for Visible and Near Infrared Wavelength Applications. DRC 2024: 1-2 - Mario Bendra, Bernhard Pruckner, R. L. de Orio, Siegfried Selberherr, Wolfgang Goes, Viktor Sverdlov:
Advancing Nonvolatile Memory Technologies: Enhancing Reliability and Performance through Double Spin Torque Magnetic Tunnel Junctions and Interlayer Exchange Coupling. DRC 2024: 1-2 - Robert K. A. Bennett, Lauren Hoang, Connor Cremers, Andrew J. Mannix, Eric Pop:
Improved Mobility Extraction for Transistors with Gated Contacts. DRC 2024: 1-2 - Bivek Bista, Jiaxuan Wen, Prafful Golani, Fengdeng Liu, Tristan Truttmann, Bharat Jalan, Steven Koester, Georges Pavlidis:
3D Finite Thermal Modelling of SrSnO3 Field Effect Transistors. DRC 2024: 1-2 - Anthony Cabanillas, Hemendra Nath Jaiswal, Anindita Chakravarty, Asma Ahmed, Yu Fu, Chu Te Chen, Fei Yao, Huamin Li:
Inherent Photogating in MoTe2 Transistors with Van der Waals Contacts. DRC 2024: 1-2 - Saikat Chakraborty, Jaydeep P. Kulkarni:
Analyzing the Dynamics of Store Mechanism and Data Retention through Transient Simulations in Si/Ge TRAM for Cryogenic Memory Applications. DRC 2024: 1-2 - Hui-Ping Chang, Deji Akinwande, Jean Anne C. Incorvia:
Monolayer hBN RRAM with High DC Endurance and Low Operation Voltages using an Oxidized Top Electrode. DRC 2024: 1-2 - Zih-Fei Chen, Ya-Chi Huang, Yu-Shen Lai, Yi-Ting Wu, Cheng-Ming Huang, Meng-Hsueh Chiang:
Fabrication of Hybrid Fin/Planar LDMOS with Modulation Gate. DRC 2024: 1-2 - Runzhou Chen, Hamdi Mani, Phil Marsh, Richard Al Hadi, Pragya Shrestha, Jason P. Campbell, Christopher Chen, Hao-Yu Chien, Mau-Chung Frank Chang:
A 0.16-3.7GHz Ultra-Compact Noise-Canceling Cryogenic Low-Noise Amplifier at 4 K using 16nm FinFET Technology for Qubit Readout. DRC 2024: 1-2 - Nitupon Dihingia, Aniket Sadashiva, Debanjan Bhowmik, Sandip Mondal:
Spin-coated ALPO-RRAM with Switching Speed < 50 ns and Nonlinearity 0.5. DRC 2024: 1-2 - Yuxin Du, Jesse T. Kemmerling, Jianan Song, Keisuke Shinohara, Vivek Mehrotra, Rongming Chu:
Impact of P-GaN ohmic Contact Resistivity on Switching Time of GaN Super-Heterojunction FETs. DRC 2024: 1-2 - Nicholas M. Fata, Yue Ma, Sigurd Wagner, Naveen Verma, James C. Sturm:
Investigation of Self-Heating in ZnO Thin-Film Transistors by In-Situ Gate Resistance Measurement and Effect on Device Mobility Extraction. DRC 2024: 1-2 - S. Ghosh, A. Echresh, M. B. Khan, D. Bhattacharya, U. Kentsch, Slawomir Prucnal, V. Vardhan, S. Biswas, S. Hellebust, J. Wenger, J. D. Holmes, Artur Erbe, Yordan M. Georgiev:
Polarity Control in Doped Silicon Junctionless Nanowire Transistor for Sensing Application. DRC 2024: 1-2 - Shafin Bin Hamid, Asir Intisar Khan, Huairuo Zhang, Xiangjin Wu, Albert V. Davydov, Eric Pop:
Energy-Efficient Spiking Neural Network Based on Ge4Sb6Te7 Phase-Change Memory Synapses. DRC 2024: 1-2 - Z. Hao, T. Shaw, M. Hatefipour, W. Strickland, B. H. Elfeky, D. Langone, J. Shabani, S. Shankar:
Al-InAs Superconductor-Semiconductor Josephson Junction Parametric Amplifier. DRC 2024: 1-2 - Erbing Hua, Heba Abunahla, Georgi Gaydadjiev, Said Hamdioui, Ryoichi Ishihara:
Multi-level forming-free HfO2-based ReRAM for energy-efficient computing. DRC 2024: 1-2 - Manasa Kaniselvan, Marko Mladenovic, Jente Clarysse, Kevin Portner, Mathieu Luisier:
Insights behind multi-level conductance transitions in HfOx memristors. DRC 2024: 1-2 - Eungkyun Kim, Yu-Hsin Chen, Jimy Encomendero, Debdeep Jena, Huili Grace Xing:
AlN/GaN/AlN HEMTs on Bulk AlN Substrates with High Drain Current Density > 2.8 A/mm and Average Breakdown Field > 2 MV/cm. DRC 2024: 1-2 - Shiva T. Konakanchi, Pramey Upadhyaya:
Characterizing Probabilistic Bits with Quantum Spin Defects. DRC 2024: 1-2 - Abhishek Kumar, Avirup Dasgupta:
Compact Modeling of Compound Semiconductor Memory ULTRARAM: A Universal Memory Device. DRC 2024: 1-2 - Mukul Kumar, Kuang-Yu Hsueh, Yun-Jie Huang, Chao-Hsin Wu:
A Darlington Transistor Using Cascaded n-p-n Light-Emitting Transistors for Temperature Sensor Applications. DRC 2024: 1-2 - Junmo Lee, Sunbin Deng, Jungyoun Kwak, Minji Shon, Suman Datta, Shimeng Yu:
Optimization of Backside of Silicon-Compatible High Voltage Superlattice Capacitor for 12V-to-6V On-Chip Voltage Conversion. DRC 2024: 1-2 - Jian-Sian Li, Hsiao-Hsuan Wan, Chao-Ching Chiang, Timothy Jinsoo Yoo, Meng-Hsun Yu, Fan Ren, Honggyu Kim, Yu-Te Liao, Stephen J. Pearton:
Demonstration of Record Breakdown up to 13.5 kV in NiO/β-Ga2O3 Vertical Rectifiers. DRC 2024: 1-2 - Kun Liang, Haochen Zhang, Haiding Sun:
Improved Electrical Characteristics of GaN-based HEMTs with Rationally Designed Compositionally Graded AlGaN Back Barrier and Passivation Schemes. DRC 2024: 1-2 - Davide G. F. Lombardo, Mamidala Saketh Ram, Tommaso Stecconi, Wooseok Choi, Antonio La Porta, Donato Francesco Falcone, Bert J. Offrein, Valeria Bragaglia:
Read Noise Analysis in Analog Conductive-Metal-Oxide/HfOx ReRAM Devices. DRC 2024: 1-2
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