"Improved Electrical Characteristics of GaN-based HEMTs with Rationally ..."

Kun Liang, Haochen Zhang, Haiding Sun (2024)

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DOI: 10.1109/DRC61706.2024.10605491

access: closed

type: Conference or Workshop Paper

metadata version: 2024-10-06

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Kun Liang, Haochen Zhang, Haiding Sun:
Improved Electrical Characteristics of GaN-based HEMTs with Rationally Designed Compositionally Graded AlGaN Back Barrier and Passivation Schemes. DRC 2024: 1-2

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