- Karl Hess, Umberto Ravaioli, M. Das Gupta, N. Aluru, Yves der Straaten, Robert S. Eisenberg:
Simulation of Biological Ionic Channels by Technology Computer-Aided Design. VLSI Design 13(1-4): 179-187 (2001) - K. Horio, Y. Mitani, A. Wakabayashi, N. Kurosawa:
Simulation of Drastic Lag Phenomena in GaAs-Based FETs for Large Voltage Swing. VLSI Design 13(1-4): 245-249 (2001) - Giuseppe Iannaccone, S. Gennai:
Program, Erase and Retention Times of Thin-oxide Flash-EEPROMs. VLSI Design 13(1-4): 431-434 (2001) - Jürgen Jakumeit, Torsten Mietzner, Umberto Ravaioli:
Efficient Silicon Device Simulation with the Local Iterative Monte Carlo Method. VLSI Design 13(1-4): 57-61 (2001) - C. Jungemann, Burkhard Neinhüs, Bernd Meinerzhagen:
Investigation of the Local Force Approximation in Numerical Device Simulation by Full-band Monte Carlo Simulation. VLSI Design 13(1-4): 281-285 (2001) - Karol Kalna, Asen Asenov, K. Elgaid, Iain Thayne:
Scaling of pHEMTs to Decanano Dimensions. VLSI Design 13(1-4): 435-439 (2001) - J. Kang, X. He, Dragica Vasileska
, Dieter K. Schroder:
Optimization of FIBMOS Through 2D Silvaco ATLAS and 2D Monte Carlo Particle-based Device Simulations. VLSI Design 13(1-4): 251-256 (2001) - Asim Kepkep, Umberto Ravaioli, Brian Winstead:
Cluster-based Parallel 3-D Monte Carlo Device Simulation. VLSI Design 13(1-4): 51-56 (2001) - W. K. Leung, R. J. Needs, Ganesh Rajagopalan, Satoshi Itoh, Sigeo Ihara:
Quantum Monte Carlo Study of Silicon Self-interstitial Defects. VLSI Design 13(1-4): 229-235 (2001) - Thomas D. Linton Jr., Shaofeng Yu, Reaz Shaheed:
3D Modelling of Fluctuation Effects in Highly Scaled VLSI Devices. VLSI Design 13(1-4): 103-109 (2001) - M. Lorenzini, Luc Haspeslagh, Jan Van Houdt, Herman E. Maes:
Simulation of 0.35 μm/0.25 μm CMOS Technology Doping Profiles. VLSI Design 13(1-4): 459-463 (2001) - Paolo Lugli, Fabio Compagnone, Aldo Di Carlo, Andrea Reale:
Simulation of Optoelectronic Devices. VLSI Design 13(1-4): 23-36 (2001) - Torsten Mietzner, Jürgen Jakumeit, Umberto Ravaioli:
Influence of Electron-Electron Interaction on Electron Distributions in Short Si-MOSFETs Analysed Using the Local Iterative Monte Carlo Technique. VLSI Design 13(1-4): 175-178 (2001) - Tanroku Miyoshi, Tetsuo Miyamoto, Matsuto Ogawa:
Quantum Transport Modeling of Current Noise in Quantum Devices. VLSI Design 13(1-4): 369-373 (2001) - N. Mori, C. Hamaguchi, Laurence Eaves, P. C. Main:
Numerical Studies of Miniband Conduction in Quasi-One-Dimensional Superlattices. VLSI Design 13(1-4): 45-50 (2001) - H.-O. Müller, D. A. Williams, Hiroshi Mizuta:
Design Optimization of Coulomb Blockade Devices. VLSI Design 13(1-4): 193-198 (2001) - Orazio Muscato, Vittorio Romano:
Simulation of Submicron Silicon Diodes with a Non-Parabolic Hydrodynamical Model Based on the Maximum Entropy Principle. VLSI Design 13(1-4): 273-279 (2001) - Mihail Nedjalkov, Hans Kosina, Siegfried Selberherr, Ivan Tomov Dimov:
A Backward Monte Carlo Method for Simulation of the Electron Quantum Kinetics in Semiconductors. VLSI Design 13(1-4): 405-411 (2001) - Matsuto Ogawa, Ryuichiro Tominaga, Tanroku Miyoshi:
Tight Binding Simulation of Quantum Transport in Interband Tunneling Devices. VLSI Design 13(1-4): 69-74 (2001) - D. Oriato, Alison B. Walker, W. N. Wang:
Simulation of Widebandgap Multi-Quantum Well Light Emitting Diodes. VLSI Design 13(1-4): 295-299 (2001) - Xavier Oriols, Jordi Suñé:
Study of Electronic Transport in Tunneling Devices Using an Incoherent Superposition of Time Dependent Wave Packets. VLSI Design 13(1-4): 145-148 (2001) - Alessandro Pecchia, B. Movaghar, Robert W. Kelsall, A. Bourlange, Stephen D. Evans, B. J. Hickey, N. Boden:
Electronic Transport in Self-organised Molecular Nanostructured Devices. VLSI Design 13(1-4): 305-309 (2001) - C. Pennetta, Luca Reggiani, G. Trefán, R. Cataldo, Giorgio De Nunzio:
A Percolative Approach to Reliability of Thin Film Interconnects and Ultra-thin Dielectrics. VLSI Design 13(1-4): 363-367 (2001) - K. G. Rajendran, Wim Schoenmaker:
Measurement and Simulation of Boron Diffusivity in Strained Si1 -xGex Epitaxial Layers. VLSI Design 13(1-4): 317-321 (2001) - Salvador Rodríguez, J. Banqueri, J. E. Carceller:
Evaluation of an Equivalent Hole Effective Mass for Si/SiGe Structures. VLSI Design 13(1-4): 265-268 (2001) - D. A. Romanov, J. Eizenkop, V. V. Mitin:
Dynamics of Non-equilibrium Short-wave-length Phonons in Semiconductor Heterostructures. VLSI Design 13(1-4): 447-451 (2001) - Michel Rousseau, J.-C. de Jaeger:
2D-Hydrodynamic Energy Model Including Avalanche Breakdown Phenomenon for Power Field Effect Transistors. VLSI Design 13(1-4): 323-328 (2001) - F. Sacconi, Fabio Della Sala, Aldo Di Carlo, Paolo Lugli:
Microscopic Modeling of GaN-based Heterostructures. VLSI Design 13(1-4): 387-391 (2001) - Min Shen, Ming-C. Cheng, Juin J. Liou:
A Generalized Finite Element Method for Hydrodynamic Modeling of Short-channel Devices. VLSI Design 13(1-4): 79-84 (2001) - Min Shen, Wai-Kay Yip, Ming-C. Cheng, Juin J. Liou:
An Upstream Flux Splitting Method for Hydrodynamic Modeling of Deep Submicron Devices. VLSI Design 13(1-4): 329-334 (2001)
