- 2023
- Akin Akturk, Ayushman Tripathi, Mehdi Saligane:
Cryogenic Modeling for Open-Source Process Design Kit Technology. BCICTS 2023: 58-65 - Amirreza Alizadeh, Utku Soylu, Navneet Sharma, Gary Xu, Mark J. W. Rodwell:
D-Band Power Amplifier with 27 dBm Peak Output Power and 14.9% PAE in 250-nm InP HBT Technology. BCICTS 2023: 94-97 - Farooq Amin, Shuai Zhou, Long Huang, Christopher Latorre, Folu Popoola, Parrish Ralston:
Gen1 Active Tunable SiGe Integrated Parallel Synthesis Filters (PSF) without Q-Enhancement. BCICTS 2023: 110-113 - Ivan Berdalovic, Mirko Poljak
, Tomislav Suligoj:
Optimization of GaN HEMTs with ScAlN Barrier for High 2DEG Density and Low on-Resistance. BCICTS 2023: 314-317 - Joseph Casamento, Kazuki Nomoto, Thai-Son Nguyen, Hyunjea Lee, Chandrasekhar Savant, Lei Li, Austin Hickman, Takuya Maeda, Yu-Tsun Shao, Jimy Encomendero, Ved Gund, Timothy Vasen, Shamima Afroz, Daniel J. Hannan, David A. Muller, Huili Grace Xing, Debdeep Jena:
AlScN High Electron Mobility Transistors: Integrating High Piezoelectric, High K Dielectric, and Ferroelectric Functionality. BCICTS 2023: 132-136 - Jeff Shih-Chieh Chien, Eythan Lam, James F. Buckwalter:
An 18.6-dBm, 8-Way-Combined D-Band Power Amplifier with 21.6% PAE in 22-nm FD-SOI CMOS. BCICTS 2023: 179-182 - Ethan Chou, Hesham Beshary, Meng Wei, Rami Hijab, Farhana Sheikh, Steven Callender, Ali M. Niknejad:
Comparative Performance of 100-200 GHz Wideband Transceivers: CMOS vs Compound Semiconductors. BCICTS 2023: 292-299 - Filippo Ciabattini, Akshay M. Arabhavi, Sara Hamzeloui, Mojtaba Ebrahimi, Olivier Ostinelli, Colombo R. Bolognesi:
Thermal Characterization of InP/GaAsSb DHBTs: Effect of Emitter and Collector Layers. BCICTS 2023: 24-27 - John D. Cressler:
The SiGe HBT at Cryogenic Temperatures: Invited Pager. BCICTS 2023: 274-279 - Melika Dedovic, Florian Vogelsang, Hakan Papurcu, Klaus Aufinger, Nils Pohl:
A 61-187.2-GHz Traveling Wave Push-Push Frequency Doubler in a 130 nm SiGe:C BiCMOS Technology With 101.7% Fractional Bandwidth. BCICTS 2023: 237-240 - Dan Denninghoff, F. Erdem Arkun, Jeong-Sun Moon, Haidang Tran, Andrea L. Corrion, Georges Siddiqi, David Fanning, Micha Fireman, J. Tai, Joel Wong, Bob Grabar, C. Dao, Ivan Milosavljevic, Ryan Tran, Ariel Getter, Andrew Clapper, S. Dadafshar, Jana Georgieva, Harris Moyer, Nicholas C. Miller, Michael Elliott, Ryan Gilbert:
Adaptable 40 nm GaN T-Gate MMIC Processes for Millimeter-Wave Applications. BCICTS 2023: 118-123 - Damla Dimlioglu, Alyosha C. Molnar:
Demonstration of a Ku-Band N-Path Downconverter in GaN-on-SiC. BCICTS 2023: 106-109 - David Fanning, Andrea L. Corrion, Georges Siddiqi, Souheil Nadri, Dan Denninghoff, F. Erdem Arkun, Sadaf Dadafshar, Ignacio Ramos, Harris Moyer, Andy Fu, John Carlson, Shyam Bharadwaj:
Millimeter-Wave Gallium Nitride Maturation of 40nm T3 Gallium Nitride Monolithic Microwave Integrated Circuit Process. BCICTS 2023: 141-144 - A. Gauthier, E. Brezza, A. Montagné, N. Guitard, J. Azevedo Goncalves, Michel Buczko, S. Jan, N. Derrier, Didier Céli, C. Deglise-Favre, J. Ma, H. Audouin, F. Deprat, I D. Ristoiu, L. Berthier, L. Clément, B. Grelaud, C. Rougier, Pascal Chevalier:
Low-Noise Si/SiGe HBT for LEO Satellite User Terminals in Ku-Ka Bands. BCICTS 2023: 187-190 - Shuvadip Ghosh, Hao Li, Nils Pohl:
Low Phase Noise and Low Power Consumption Magnetic Cross-Coupled Push-Push VCO in SiGe BiCMOS Technology. BCICTS 2023: 203-206 - Senne Gielen, Yang Zhang, Mark Ingels, Patrick Reynaert:
A Compact 0.98 THz Source With On-Chip Antenna In 250-nm InP DHBT. BCICTS 2023: 86-89 - Bernhard Grote, Bruce Green, C. Gaw, Y. Wei, D. Hill, Philippe Renaud, J. Wan, C. Rampley, David Burdeaux, K. Foxx, M. Vadipour, D. Currier, C. Zhu, Humayun Kabir, T. Arnold, H. Stewart, D. Ferguson, J. Higginbottom, Patrick Hu:
High Performance 0.25µm GaN Technology with Low Memory Effects. BCICTS 2023: 137-140 - Shinji Hachiyama, Koki Tanji, Toshihide Kuwabara, Naoki Oshima, Kazuaki Kunihiro, Tomoya Kaneko:
A D-Band Sub-Harmonically Pumped Mixer with High LO Suppression Using 250-nm InP DHBT P-N Junction. BCICTS 2023: 241-244 - Rachid Hamani, João Roberto Raposo de Oliveira Martins, Hagen Wald, Joerg Gessner, Michaelina Ong Ing Ing:
A Physically-Based Matching Model for HiSIM_HV. BCICTS 2023: 54-57 - Sara Hamzeloui, Akshay M. Arabhavi, Filippo Ciabattini, Mojtaba Ebrahimi, Markus Müller, Olivier Ostinelli, Michael Schröter, Colombo R. Bolognesi:
Multi-Finger 250-nm InP/GaAsSb DHBTs with Record 37.3 % Class-A PAE at 94 GHz. BCICTS 2023: 145-148 - Omar Hassan, Mir H. Mahmud, Abdulrahman A. Alhamed, Gabriel M. Rebeiz:
A Wideband Ultra-Low Noise 15-55 GHz Dual-Beam Receive Phased-Array Beamformer with 2.9-4.2 dB NF. BCICTS 2023: 215-218 - Romain Hersent, Filipe Jorge, Fabrice Blache, Bernadette Duval, Michel Goix, Haïk Mardoyan, Sylvain Almonacil, M. Xu, Y. Zhu, L. Chen, Z. Hu, Jeremie Renaudier, Muriel Riet, Agnieszka Konczykowska, Bertrand Ardouin:
100 GBaud DSP-Free PAM-4 Optical Signal Generation Using an InP-DHBT AMUX-Driver and a Thin-Film Lithium Niobate Modulator Assembly. BCICTS 2023: 149-152 - Mohammed Iftekhar, Harshan Gowda, Pascal Kneuper, Babak Sadiye, Wolfgang Mueller, Johann-Christoph Scheytt:
A 28-Gb/s 27.2mW NRZ Full-Rate Bang-Bang Clock and Data Recovery in 22 nm FD-SOI CMOS Technology. BCICTS 2023: 191-194 - Dimitris P. Ioannou, Ephrem G. Gebreselasie, Vinh Pham, Uppili S. Raghunathan:
Electrostatic Discharge Stress Effects on the Performance and Reliability of High Performance NPN SiGe HBTs. BCICTS 2023: 245-248 - Laurenz John, Thomas Merkle, Arnulf Leuther, Jaehoon Chung:
Multi-Channel PA, LNA, and Switch MMICs for Beam-Switching Applications at 160 GHz, Based on an InGaAs mHEMT Technology. BCICTS 2023: 284-287 - Rob D. Jones, Jerome Cheron, Bryan T. L. Bosworth, Benjamin F. Jamroz, Dylan F. Williams, Miguel E. Urteaga, Ari D. Feldman, Peter H. Aaen:
Microstrip and Grounded CPW Calibration Kit Comparison for On-Wafer Transistor Characterization from 220 GHz to 325 GHz. BCICTS 2023: 124-127 - Teruo Jyo, Munehiko Nagatani, Miwa Mutoh, Yuta Shiratori, Hitoshi Wakita, Hiroyuki Takahashi:
A DC-to-150-GHz InP-DHBT Active Combiner Module for Ultra-Broadband Signal Generation. BCICTS 2023: 195-198 - M. El Kaamouchi, A. Gasmi, Bartosz Wróblewski, Rémy Leblanc, J. Poulain, P. Altuntas:
GaN/Si 37-40 GHz T/R Chip MMIC for 5G Communications. BCICTS 2023: 225-228 - Thomas Kazior, Sharon Woodruff, Gregory Jones, Iskren Abdomerovic:
3D Heterogeneous Integration (3DHI): An Enabler For Next Generation RF Systems. BCICTS 2023: 1-4 - Justin J. Kim, Wonho Lee, James F. Buckwalter:
A 12-162 GHz Distributed Amplifier in a 45-nm BiCMOS SOI Process Achieving 2.67 THz Gain-Bandwidth Using an Active Bias Termination. BCICTS 2023: 171-174
