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ORCIDMikael Östling
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Journal Articles
- 2011
[j2]Mikael Östling:
High power devices in wide bandgap semiconductors. Sci. China Inf. Sci. 54(5): 1087-1093 (2011)- 2001
- [j1]Martin Sandén, B. Gunnar Malm, Jan V. Grahn, Mikael Östling:
Lateral base design rules for optimized low-frequency noise of differentially grown SiGe heterojunction bipolar transistors. Microelectron. Reliab. 41(6): 881-886 (2001)
Conference and Workshop Papers
- 2021
- [c11]Laura Zurauskaite
, Mikael Östling, Per-Erik Hellström:
Improvement on Ge/GeOx/Tm2O3/HfO2 Gate Performance by Forming Gas Anneal. ESSDERC 2021: 227-230 - 2017
- [c10]B. Gunnar Malm, Hossein Elahipanah, Arash Salemi, Mikael Östling:
Gated base structure for improved current gain in SiC bipolar technology. ESSDERC 2017: 122-125 - 2016
- [c9]Anderson D. Smith, Karim Elgammal, Xuge Fan, Max Christian Lemme, Anna Delin, Frank Niklaus, Mikael Östling:
Toward effective passivation of graphene to humidity sensing effects. ESSDERC 2016: 299-302 - 2015
- [c8]Yury Illarionov, Michael Waltl, Anderson D. Smith, Sam Vaziri, Mikael Östling, Max Christian Lemme, Tibor Grasser:
Interplay between hot carrier and bias stress components in single-layer double-gated graphene field-effect transistors. ESSDERC 2015: 172-175 - [c7]Sam Vaziri, Melkamu Belete, Anderson D. Smith, Eugenio Dentoni Litta, Grzegorz Lupina, Max Christian Lemme, Mikael Östling:
Step tunneling-enhanced hot-electron injection in vertical graphene base transistors. ESSDERC 2015: 198-201 - [c6]Yury Illarionov, Michael Waltl, Anderson D. Smith, Sam Vaziri, Mikael Östling, Thomas Mueller, Max Christian Lemme, Tibor Grasser:
Hot-carrier degradation in single-layer double-gated graphene field-effect transistors. IRPS 2015: 2 - 2014
- [c5]Sam Vaziri, Anderson D. Smith, Grzegorz Lupina, Max Christian Lemme, Mikael Östling:
PDMS-supported graphene transfer using intermediary polymer layers. ESSDERC 2014: 309-312 - [c4]Maryam Olyaei, B. Gunnar Malm, Eugenio Dentoni Litta, Per-Erik Hellström, Mikael Östling:
Improved low-frequency noise for 0.3nm EOT thulium silicate interfacial layer. ESSDERC 2014: 361-364 - 2013
- [c3]Eugenio Dentoni Litta, Per-Erik Hellström, Mikael Östling:
Mobility enhancement by integration of TmSiO IL in 0.65nm EOT high-k/metal gate MOSFETs. ESSDERC 2013: 155-158 - 2012
- [c2]Maziar M. Naiini, Christoph Henkel, B. Gunnar Malm, Mikael Östling:
CMOS compatible ALD high-k double slot grating couplers for on-chip optical interconnects. ESSDERC 2012: 93-96 - [c1]Sam Vaziri, Anderson D. Smith, Christoph Henkel, Mikael Östling, Max Christian Lemme, Grzegorz Lupina, Gunther Lippert, Jarek Dabrowski, Wolfgang Mehr:
An integration approach for graphene double-gate transistors. ESSDERC 2012: 250-253
Reference Works
- 1999
- [r1]Jan V. Grahn, Mikael Östling:
Bipolar Technology. The VLSI Handbook 1999
Coauthor Index
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