"Gated base structure for improved current gain in SiC bipolar technology."

B. Gunnar Malm et al. (2017)

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DOI: 10.1109/ESSDERC.2017.8066607

access: closed

type: Conference or Workshop Paper

metadata version: 2022-10-02

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B. Gunnar Malm, Hossein Elahipanah, Arash Salemi, Mikael Östling:
Gated base structure for improved current gain in SiC bipolar technology. ESSDERC 2017: 122-125

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