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2020 – today
- 2023
[j7]Stefan Moench
, Richard Reiner, Michael Basler, Daniel Grieshaber, Fouad Benkhelifa, Patrick Waltereit, Rüdiger Quay:
Three-Phase Motor Inverter and Current Sensing GaN Power IC. Sensors 23(14): 6512 (2023)- 2022
- [j6]Stefan Moench, Richard Reiner, Patrick Waltereit, Christian Molin, Sylvia E. Gebhardt, David Bach, Roland Binninger, Kilian Bartholomé:
Enhancing Electrocaloric Heat Pump Performance by Over 99% Efficient Power Converters and Offset Fields. IEEE Access 10: 46571-46588 (2022) - 2021
- [j5]Michael Basler, Richard Reiner, Stefan Moench, Fouad Benkhelifa, Philipp Döring, Patrick Waltereit, Rüdiger Quay, Oliver Ambacher:
Building Blocks for GaN Power Integration. IEEE Access 9: 163122-163137 (2021)
2010 – 2019
- 2018
- [c2]Patrick Waltereit, Marina Preschle, Stefan Muller, Lutz Kirste, Heiko Czap, Joachim Ruster, Michael Dammann, Richard Reiner:
A homogeneous and reproducible large-area, low dispersion GaN-on-Si normally-off 600 V transistor technology using selective GaN etching. DRC 2018: 1-2 - 2015
- [c1]Matthias Wespel, Maximilian Dammann, Vladimir Polyakov, Richard Reiner, Patrick Waltereit, B. Weiss, Rüdiger Quay, Michael Mikulla, Oliver Ambacher:
High-voltage stress time-dependent dispersion effects in AlGaN/GaN HEMTs. IRPS 2015: 2 - 2014
- [j4]Matthias Wespel, Martina Baeumler, Vladimir Polyakov, Maximilian Dammann, Richard Reiner, Patrick Waltereit, Rüdiger Quay, Michael Mikulla, Oliver Ambacher:
Influence of surface states on the voltage robustness of AlGaN/GaN HFET power devices. Microelectron. Reliab. 54(12): 2656-2661 (2014) - 2011
- [j3]M. Cäsar, Maximilian Dammann, Vladimir Polyakov, Patrick Waltereit, Rüdiger Quay, Michael Mikulla, Oliver Ambacher:
Critical factors influencing the voltage robustness of AlGaN/GaN HEMTs. Microelectron. Reliab. 51(2): 224-228 (2011)
2000 – 2009
- 2009
- [j2]Maximilian Dammann, W. Pletschen, Patrick Waltereit, Wolfgang Bronner, Rüdiger Quay, Stefan Müller, Michael Mikulla, Oliver Ambacher, P. J. van der Wel, S. Murad, T. Rödle, R. Behtash, F. Bourgeois, K. Riepe, Martin Fagerlind, Einar Örn Sveinbjörnsson:
Reliability and degradation mechanism of AlGaN/GaN HEMTs for next generation mobile communication systems. Microelectron. Reliab. 49(5): 474-477 (2009) - 2006
- [j1]Andrea Corrion, Christiane Poblenz, Patrick Waltereit, Tomás Palacios, Siddharth Rajan, Umesh K. Mishra, Jim S. Speck:
Review of Recent Developments in Growth of AlGaN/GaN High-Electron Mobility Transistors on 4H-SiC by Plasma-Assisted Molecular Beam Epitaxy. IEICE Trans. Electron. 89-C(7): 906-912 (2006)
Coauthor Index
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