"A homogeneous and reproducible large-area, low dispersion GaN-on-Si ..."

Patrick Waltereit et al. (2018)

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DOI: 10.1109/DRC.2018.8442144

access: closed

type: Conference or Workshop Paper

metadata version: 2024-10-06

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Patrick Waltereit, Marina Preschle, Stefan Muller, Lutz Kirste, Heiko Czap, Joachim Ruster, Michael Dammann, Richard Reiner:
A homogeneous and reproducible large-area, low dispersion GaN-on-Si normally-off 600 V transistor technology using selective GaN etching. DRC 2018: 1-2

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