"Influence of surface states on the voltage robustness of AlGaN/GaN HFET ..."

Matthias Wespel et al. (2014)

> Home

Details and statistics

DOI: 10.1016/J.MICROREL.2014.09.016

access: closed

type: Journal Article

metadata version: 2024-10-06

- view
  - electronic edition via DOI
  - unpaywalled version
  authority control:
- export record
  dblp key:
  - journals/mr/WespelBPDRWQMA14
- ask others
- share record
  persistent URL:
  - https://dblp.org/rec/journals/mr/WespelBPDRWQMA14
Matthias Wespel, Martina Baeumler, Vladimir Polyakov, Maximilian Dammann, Richard Reiner, Patrick Waltereit, Rüdiger Quay, Michael Mikulla, Oliver Ambacher:
Influence of surface states on the voltage robustness of AlGaN/GaN HFET power devices. Microelectron. Reliab. 54(12): 2656-2661 (2014)

manage site settings

To protect your privacy, all features that rely on external API calls from your browser are turned off by default. You need to opt-in for them to become active. All settings here will be stored as cookies with your web browser. For more information see our F.A.Q.