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ORCIDVladimir Polyakov
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2020 – today
- 2021
[c5]Vladimir Polyakov
, Dmitriy Bukhanov, Maxim Panchenko:
Identification of the Network State Based on the ART-2 Neural Network with a Hierarchical Memory Structure in Parallel Mode. RCAI 2021: 31-40- 2020
- [c4]Tobias Kemmer, Michael Dammann, Martina Baeumler, Vladimir Polyakov, Peter Brückner, Helmer Konstanzer, Rüdiger Quay, Oliver Ambacher:
Failure Analysis of 100 nm AlGaN/GaN HEMTs Stressed under On- and Off-State Stress. IRPS 2020: 1-6
2010 – 2019
- 2017
- [j4]Maximilian Dammann, Martina Baeumler, Vladimir Polyakov, Peter Brückner, Helmer Konstanzer, Rüdiger Quay, Michael Mikulla, Andreas Graff, Michél Simon-Najasek:
Reliability of 100 nm AlGaN/GaN HEMTs for mm-wave applications. Microelectron. Reliab. 76-77: 292-297 (2017) - 2016
- [c3]Ivan Anisimov, Elena Makarova, Vladimir Polyakov:
Chunking in Dependency Model and Spelling Correction in Russian and English. IntelliSys (1) 2016: 218-231 - 2015
- [c2]Matthias Wespel, Maximilian Dammann, Vladimir Polyakov, Richard Reiner, Patrick Waltereit, B. Weiss, Rüdiger Quay, Michael Mikulla, Oliver Ambacher:
High-voltage stress time-dependent dispersion effects in AlGaN/GaN HEMTs. IRPS 2015: 2 - 2014
- [j3]Matthias Wespel, Martina Baeumler, Vladimir Polyakov, Maximilian Dammann, Richard Reiner, Patrick Waltereit, Rüdiger Quay, Michael Mikulla, Oliver Ambacher:
Influence of surface states on the voltage robustness of AlGaN/GaN HFET power devices. Microelectron. Reliab. 54(12): 2656-2661 (2014) - 2013
- [j2]Valery D. Solovyev, Vladimir Polyakov, Vladimir Ivanov, Ivan Anisimov, Andrey Ponomarev:
An Approach to Semantic Natural Language Processing of Russian Texts. Res. Comput. Sci. 65: 65-73 (2013) - [c1]Anastasiia Kuzenkova, Anna Deripaska, Timofey Bryksin, Yurii Litvinov, Vladimir Polyakov:
QReal DSM platform - An Environment for Creation of Specific Visual IDEs. ENASE 2013: 205-211 - 2011
- [j1]M. Cäsar, Maximilian Dammann, Vladimir Polyakov, Patrick Waltereit, Rüdiger Quay, Michael Mikulla, Oliver Ambacher:
Critical factors influencing the voltage robustness of AlGaN/GaN HEMTs. Microelectron. Reliab. 51(2): 224-228 (2011)
Coauthor Index
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