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Michael Mikulla

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2020 – today

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2024
[c3]
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  - conf/drc/SinnwellDDLMQ24
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Matthias Sinnwell, Michael Dammann, Rachid Driad, Stefano Leone, Michael Mikulla, Rüdiger Quay:
Scaling of GaN FinFETs on 4 Inch Silicon Carbide from 20 to 150 Fins with Maximum Frequency of Oscillation fmax = 20.4 GHz. DRC 2024: 1-2
2023
[c2]
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Matthias Sinnwell, Michael Dammann, Rachid Driad, Sebastian Krause, Stefano Leone, Michael Mikulla, Rüdiger Quay:
Normally-off quasi-vertical GaN FinFET on SiC substrate with record small-signal current gain of $\mathrm{f}_{\mathrm{t}}=10.2$ GHz. DRC 2023: 1-2

2010 – 2019

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2017
[j7]
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Maximilian Dammann, Martina Baeumler, Vladimir Polyakov, Peter Brückner, Helmer Konstanzer, Rüdiger Quay, Michael Mikulla, Andreas Graff, Michél Simon-Najasek:
Reliability of 100 nm AlGaN/GaN HEMTs for mm-wave applications. Microelectron. Reliab. 76-77: 292-297 (2017)
2015
[j6]
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Maximilian Dammann, Martina Baeumler, Peter Brückner, Wolfgang Bronner, Stephan Maroldt, Helmer Konstanzer, Matthias Wespel, Rüdiger Quay, Michael Mikulla, Andreas Graff, M. Lorenzini, M. Fagerlind, P. J. van der Wel, T. Rödle:
Degradation of 0.25 μm GaN HEMTs under high temperature stress test. Microelectron. Reliab. 55(9-10): 1667-1671 (2015)
[c1]
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Matthias Wespel, Maximilian Dammann, Vladimir Polyakov, Richard Reiner, Patrick Waltereit, B. Weiss, Rüdiger Quay, Michael Mikulla, Oliver Ambacher:
High-voltage stress time-dependent dispersion effects in AlGaN/GaN HEMTs. IRPS 2015: 2
2014
[j5]
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Matthias Wespel, Martina Baeumler, Vladimir Polyakov, Maximilian Dammann, Richard Reiner, Patrick Waltereit, Rüdiger Quay, Michael Mikulla, Oliver Ambacher:
Influence of surface states on the voltage robustness of AlGaN/GaN HFET power devices. Microelectron. Reliab. 54(12): 2656-2661 (2014)
2011
[j4]
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  - journals/mr/CasarDPWQMA11
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M. Cäsar, Maximilian Dammann, Vladimir Polyakov, Patrick Waltereit, Rüdiger Quay, Michael Mikulla, Oliver Ambacher:
Critical factors influencing the voltage robustness of AlGaN/GaN HEMTs. Microelectron. Reliab. 51(2): 224-228 (2011)

2000 – 2009

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2009
[j3]
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  - journals/mr/DammannPWBQMMAWMRBBRFS09
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Maximilian Dammann, W. Pletschen, Patrick Waltereit, Wolfgang Bronner, Rüdiger Quay, Stefan Müller, Michael Mikulla, Oliver Ambacher, P. J. van der Wel, S. Murad, T. Rödle, R. Behtash, F. Bourgeois, K. Riepe, Martin Fagerlind, Einar Örn Sveinbjörnsson:
Reliability and degradation mechanism of AlGaN/GaN HEMTs for next generation mobile communication systems. Microelectron. Reliab. 49(5): 474-477 (2009)
2006
[j2]
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Rachid Driad, Robert E. Makon, Karl Schneider, Ulrich Nowotny, Rolf Aidam, Rüdiger Quay, Michael Schlechtweg, Michael Mikulla, Günter Weimann:
InP DHBT Based IC Technology for over 80 Gbit/s Data Communications. IEICE Trans. Electron. 89-C(7): 931-936 (2006)
2004
[j1]
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Maximilian Dammann, Arnulf Leuther, Rüdiger Quay, M. Meng, Helmer Konstanzer, W. Jantz, Michael Mikulla:
Reliability of 70 nm metamorphic HEMTs. Microelectron. Reliab. 44(6): 939-943 (2004)

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