"Normally-off quasi-vertical GaN FinFET on SiC substrate with record ..."

Matthias Sinnwell et al. (2023)

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DOI: 10.1109/DRC58590.2023.10187017

access: closed

type: Conference or Workshop Paper

metadata version: 2023-11-12

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Matthias Sinnwell, Michael Dammann, Rachid Driad, Sebastian Krause, Stefano Leone, Michael Mikulla, Rüdiger Quay:
Normally-off quasi-vertical GaN FinFET on SiC substrate with record small-signal current gain of $\mathrm{f}_{\mathrm{t}}=10.2$ GHz. DRC 2023: 1-2

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