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ORCIDJohan Bourgeat
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Journal Articles
- 2013
[j5]Philippe Galy, T. Lim, J. Bourgeat, Jean Jimenez, Boris Heitz, D. Marin-Cudraz, Ph. Benech, J. M. Fournier:
Symmetrical ESD protection for advanced CMOS technology dedicated to 100 GHz RF application. Microelectron. Reliab. 53(9-11): 1284-1287 (2013)- 2012
- [j4]Philippe Galy, Johan Bourgeat, Jean Jimenez, Nicolas Guitard, Alexandre Dray, Ghislain Troussier, Blaise Jacquier, David Marin-Cudraz:
Symmetrical ESD trigger and pull-up using BIMOS transistor in advanced CMOS technology. Microelectron. Reliab. 52(9-10): 1998-2004 (2012) - 2011
- [j3]Philippe Galy, J. Bourgeat, Jean Jimenez, Blaise Jacquier, D. Marin-Cudraz, Sylvain Dudit:
Reliability impact due to high current, lattice and hot carriers temperatures on β(2×2) matrix ESD power devices for advanced CMOS technologies. Microelectron. Reliab. 51(9-11): 1608-1613 (2011) - [j2]J. Bourgeat, Philippe Galy, A. Dray, Jean Jimenez, D. Marin-Cudraz, Blaise Jacquier:
A full characterization of single pitch IO ESD protection based on silicon controlled rectifier and dynamic trigger circuit in CMOS 32 nm node. Microelectron. Reliab. 51(9-11): 1614-1617 (2011) - 2010
- [j1]J. Bourgeat, Christophe Entringer, Philippe Galy, Marise Bafleur, D. Marin-Cudraz:
Evaluation of the ESD performance of local protections based on SCR or bi-SCR with dynamic or static trigger circuit in 32 nm. Microelectron. Reliab. 50(9-11): 1379-1382 (2010)
Conference and Workshop Papers
- 2024
- [c5]Thalis Da C. Guedes, Johan Bourgeat, Manuel J. Barragán, Jean-Marc Duchamp, Philippe Ferrari:
Design and Evaluation of a 10 GHz LNA with Balun and Diodes for HBM and CDM ESD Protection in 28 nm CMOS FD-SOI. SBCCI 2024: 1-5 - 2021
- [c4]Chloe Troussier, Johan Bourgeat, Blaise Jacquier, Emmanuel Simeu, Jean-Daniel Arnould:
Estimation of Oxide Breakdown Voltage During a CDM Event Using Very Fast Transmission Line Pulse and Transmission Line Pulse Measurements. IRPS 2021: 1-5 - 2014
- [c3]Philippe Galy, J. Bourgeat, D. Marin-Cudraz:
New modular bi-directional power-switch and self ESD protected in 28nm UTBB FDSOI advanced CMOS technology. ICICDT 2014: 1-4 - 2012
- [c2]Philippe Galy, Jean Jimenez, Johan Bourgeat, A. Dray, Ghislain Troussier, Boris Heitz, Nicolas Guitard, David Marin-Cudraz, H. Beckrich-Ros:
BIMOS transistor and its applications in ESD protection in advanced CMOS technology. ICICDT 2012: 1-4 - [c1]Jean Jimenez, Philippe Galy, Johan Bourgeat, Boris Heitz:
High swing low capacitance ESD RF protections in advanced CMOS technologies. ICICDT 2012: 1-4
Coauthor Index
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