"Reliability impact due to high current, lattice and hot carriers ..."

Philippe Galy et al. (2011)

> Home

Details and statistics

DOI: 10.1016/J.MICROREL.2011.07.046

access: closed

type: Journal Article

metadata version: 2020-02-22

- view
  - electronic edition via DOI
  - unpaywalled version
  authority control:
- export record
  dblp key:
  - journals/mr/GalyBJJMD11
- ask others
- share record
  persistent URL:
  - https://dblp.org/rec/journals/mr/GalyBJJMD11
Philippe Galy, J. Bourgeat, Jean Jimenez, Blaise Jacquier, D. Marin-Cudraz, Sylvain Dudit:
Reliability impact due to high current, lattice and hot carriers temperatures on β^(2×2) matrix ESD power devices for advanced CMOS technologies. Microelectron. Reliab. 51(9-11): 1608-1613 (2011)

manage site settings

To protect your privacy, all features that rely on external API calls from your browser are turned off by default. You need to opt-in for them to become active. All settings here will be stored as cookies with your web browser. For more information see our F.A.Q.