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ORCIDJae-Sung Rieh
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2020 – today
- 2022
[j12]Sooyeon Kim, Daekeun Yoon
, Jungsoo Kim, Junghwan Yoo, Kiryong Song, Jae-Sung Rieh:
A CMOS 300-GHz Injection-Locked Frequency Tripler With a Tri-Layer Dual Coupled Line for Improved Locking Range. IEEE Trans. Circuits Syst. II Express Briefs 69(2): 309-313 (2022)- 2021
- [c4]Surajit Kumar Nath, Junghwan Yoo, Jae-Sung Rieh, Daekeun Yoon:
A 253-280 GHz Wide Tuning Range VCO with -3.5 dBm Peak Output Power in 40-nm CMOS. ESSCIRC 2021: 299-302
2010 – 2019
- 2019
- [c3]Sanggeun Jeon, Jae-Sung Rieh, Moonil Kim:
WR-3 Band Integrated Circuits in InP HBT Technology. ISCAS 2019: 1-5 - 2015
- [j11]Joon Goo Lee, Seon Wook Kim, Dong-Hyun Kim, Younga Cho, Jae-Sung Rieh, Gyusung Kang, Jongsun Park, Hokyu Lee, Sejin Park, Chulwoo Kim:
D2ART: Direct Data Accessing from Passive RFID Tag for infra-less, contact-less, and battery-less pervasive computing. Microprocess. Microsystems 39(8): 767-781 (2015) - 2014
- [j10]Jea-Shik Shin, Insang Song, Moon-Chul Lee, Chul-Soo Kim, Sang Uk Son, Duck-Hwan Kim, Ho-Soo Park, Jing Cui, Yujie Ai, Sungwoo Hwang, Jae-Sung Rieh:
Bulk acoustic wave resonator with suppressed energy loss using improved lateral structure. IEICE Electron. Express 11(6): 20130938 (2014) - [j9]Namhyung Kim, Kyungmin Kim, Jae-Sung Rieh:
A Triple-Push Voltage Controlled Oscillator in 0.13-µm RFCMOS Technology Operating Near 177GHz. IEICE Trans. Electron. 97-C(5): 444-447 (2014) - 2012
- [j8]Yongho Oh, Jae-Sung Rieh:
The Effect of Device Layout Schemes on RF Performance of Multi-Finger MOSFETs. IEICE Trans. Electron. 95-C(5): 785-791 (2012) - [c2]Moonil Kim, Jae-Sung Rieh, Sanggeun Jeon:
Recent progress in terahertz monolithic integrated circuits. ISCAS 2012: 746-749 - [c1]Dong-Hyun Kim, Jongwon Yun, Jae-Sung Rieh:
Si-based D-band frequency conversion circuits. ISOCC 2012: 251-253 - 2011
- [j7]Sungjin Kim, Hyunchul Kim, Dong-Hyun Kim, Sanggeun Jeon, Yeocho Yoon, Jae-Sung Rieh:
A V-Band Common-Source Low Noise Amplifier in a 0.13 µm RF CMOS Technology and the Effect of Dummy Fills. IEICE Trans. Electron. 94-C(5): 807-813 (2011) - 2010
- [j6]Seungwoo Seo, Jae-Sung Rieh:
A Low Power V-Band Injection-Locked Frequency Divider in 0.13-µm Si RFCMOS Technology. IEICE Trans. Electron. 93-C(5): 614-618 (2010)
2000 – 2009
- 2005
- [j5]Jae-Sung Rieh, David R. Greenberg, Andreas Stricker, Greg G. Freeman:
Scaling of SiGe Heterojunction Bipolar Transistors. Proc. IEEE 93(9): 1522-1538 (2005) - 2004
- [j4]Greg G. Freeman, Jae-Sung Rieh, Zhijian Yang, Fernando J. Guarín:
Reliability and performance scaling of very high speed SiGe HBTs. Microelectron. Reliab. 44(3): 397-410 (2004) - 2003
- [j3]James S. Dunn, David C. Ahlgren, Douglas D. Coolbaugh, Natalie B. Feilchenfeld, Greg G. Freeman, David R. Greenberg, Robert A. Groves, Fernando J. Guarín, Youssef Hammad, Alvin J. Joseph, Louis D. Lanzerotti, Stephen A. St. Onge, Bradley A. Orner, Jae-Sung Rieh, Kenneth J. Stein, Steven H. Voldman, Ping-Chuan Wang, Michael J. Zierak, Seshadri Subbanna, David L. Harame, Dean A. Herman Jr., Bernard S. Meyerson:
Foundation of rf CMOS and SiGe BiCMOS technologies. IBM J. Res. Dev. 47(2-3): 101-138 (2003) - [j2]Alvin J. Joseph, James S. Dunn, Greg G. Freeman, David L. Harame, Douglas Coolbaugh, Robert A. Groves, Kenneth J. Stein, Rich Volant, Seshadri Subbanna, V. S. Marangos, Stephen St. Onge, Ebenezer Eshun, P. Cooper, Jeffrey B. Johnson, Jae-Sung Rieh, Basanth Jagannathan, Vidhya Ramachandran, David Ahlgren, Dawn Wang, X. Wang:
Product applications and technology directions with SiGe BiCMOS. IEEE J. Solid State Circuits 38(9): 1471-1478 (2003) - 2002
- [j1]Greg G. Freeman, Mounir Meghelli, Young Kwark, Steven Zier, Alexander V. Rylyakov, Michael Sorna, Todd Tanji, Oswin M. Schreiber, Keith Walter, Jae-Sung Rieh, Basanth Jagannathan, Alvin J. Joseph, Seshadri Subbanna:
40-Gb/s circuits built from a 120-GHz fT SiGe technology. IEEE J. Solid State Circuits 37(9): 1106-1114 (2002)
Coauthor Index
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