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ORCIDBernard S. Meyerson
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2010 – 2019
- 2012
[c3]Bernard S. Meyerson:
Keynote speaker: Driving innovation in the "post-silicon" world. SoCC 2012: 1-2
2000 – 2009
- 2006
- [c2]Bernard S. Meyerson:
Collaborative innovation; a new lever in information technology development. Hot Chips Symposium 2006: 1-27 - 2005
- [j7]Raminderpal Singh, David L. Harame, Bernard S. Meyerson:
Special Issue on Silicon Germanium - Advanced Technology, Modeling, and Design. Proc. IEEE 93(9): 1519-1521 (2005) - 2003
- [j6]Bernard S. Meyerson:
Message from the Vice President for Technology and Chief Technologist, IBM Technology Group. IBM J. Res. Dev. 47(2-3): 98- (2003) - [j5]James S. Dunn, David C. Ahlgren, Douglas D. Coolbaugh, Natalie B. Feilchenfeld, Greg G. Freeman, David R. Greenberg, Robert A. Groves, Fernando J. Guarín, Youssef Hammad, Alvin J. Joseph, Louis D. Lanzerotti, Stephen A. St. Onge, Bradley A. Orner, Jae-Sung Rieh, Kenneth J. Stein, Steven H. Voldman, Ping-Chuan Wang, Michael J. Zierak, Seshadri Subbanna, David L. Harame, Dean A. Herman Jr., Bernard S. Meyerson:
Foundation of rf CMOS and SiGe BiCMOS technologies. IBM J. Res. Dev. 47(2-3): 101-138 (2003) - [j4]David L. Harame, Kim M. Newton, Raminderpal Singh, Susan L. Sweeney, Sue E. Strang, Jeffrey B. Johnson, Scott M. Parker, Carl E. Dickey, Mete Erturk, Greg J. Schulberg, Donald L. Jordan, David C. Sheridan, Michael P. Keene, John Boquet, Robert A. Groves, Mukesh Kumar, Dean A. Herman Jr., Bernard S. Meyerson:
Design automation methodology and rf/analog modeling for rf CMOS and SiGe BiCMOS technologies. IBM J. Res. Dev. 47(2-3): 139-176 (2003) - 2001
- [c1]Seshadri Subbanna, Lawrence Larson, Greg G. Freeman, David Ahlgren, Kenneth J. Stein, Carl E. Dickey, James Mecke, A. Rincon, P. Bacon, Robert A. Groves, Mehmet Soyuer, David L. Harame, James S. Dunn, David Rowe, W. Chon, Dean A. Herman Jr., Bernard S. Meyerson:
Silicon-germanium BiCMOS technology and a CAD environment for 2-40 GHz VLSI mixed-signal ICs. CICC 2001: 559-566 - 2000
- [j3]Bernard S. Meyerson:
Low-temperature Si and Si: Ge epitaxy by ultrahigh vacuum/chemical vapor deposition: Process fundamentals. IBM J. Res. Dev. 44(1): 132-141 (2000) - [j2]Bernard S. Meyerson:
Siliconsgermanium-based mixed-signal technology for optimization of wired and wireless telecommunications. IBM J. Res. Dev. 44(3): 391-408 (2000)
1990 – 1999
- 1992
- [j1]Bernard S. Meyerson:
UHV/CVD growth of Si and Si: Ge alloys: chemistry, physics, and device applications. Proc. IEEE 80(10): 1592-1608 (1992)
Coauthor Index
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