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ORCIDBasanth Jagannathan
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2010 – 2019
- 2010
[j5]Usha Gogineni, Hongmei Li, Jesús A. del Alamo, Susan L. Sweeney, Jing Wang, Basanth Jagannathan:
Effect of Substrate Contact Shape and Placement on RF Characteristics of 45 nm Low Power CMOS Devices. IEEE J. Solid State Circuits 45(5): 998-1006 (2010)- [c3]Ali Khaki-Firooz, Kangguo Cheng, Basanth Jagannathan, Pranita Kulkarni, Jeffrey W. Sleight, Davood Shahrjerdi, Josephine B. Chang, Sungjae Lee, Junjun Li, Huiming Bu, Robert Gauthier, Bruce Doris, Ghavam G. Shahidi:
Fully depleted extremely thin SOI for mainstream 20nm low-power technology and beyond. ISSCC 2010: 152-153
2000 – 2009
- 2009
- [j4]Munkyo Seo, Basanth Jagannathan, John J. Pekarik, Mark J. W. Rodwell:
A 150 GHz Amplifier With 8 dB Gain and +6 dBm Psat in Digital 65 nm CMOS Using Dummy-Prefilled Microstrip Lines. IEEE J. Solid State Circuits 44(12): 3410-3421 (2009) - [c2]Munkyo Seo, Basanth Jagannathan, Corrado Carta
, John J. Pekarik, Luis Chen, C. Patrick Yue, Mark J. W. Rodwell:
A 1.1V 150GHz amplifier with 8dB gain and +6dBm saturated output power in standard digital 65nm CMOS using dummy-prefilled microstrip lines. ISSCC 2009: 484-485 - 2005
- [j3]Alvin J. Joseph, David L. Harame, Basanth Jagannathan, Douglas D. Coolbaugh, David C. Ahlgren, John Magerlein, Louis D. Lanzerotti, Natalie B. Feilchenfeld, Stephen A. St. Onge, James S. Dunn, Edward J. Nowak:
Status and Direction of Communication Technologies - SiGe BiCMOS and RFCMOS. Proc. IEEE 93(9): 1539-1558 (2005) - 2004
- [c1]John J. Pekarik, David R. Greenberg, Basanth Jagannathan, Robert A. Groves, J. R. Jones, Raminderpal Singh, Anil Chinthakindi, Xudong Wang, Matthew J. Breitwisch, Douglas D. Coolbaugh, Peter E. Cottrell, John E. Florkey, Greg G. Freeman, R. Krishnasamy:
RFCMOS technology from 0.25μm to 65nm: the state of the art. CICC 2004: 217-224 - 2003
- [j2]Alvin J. Joseph, James S. Dunn, Greg G. Freeman, David L. Harame, Douglas Coolbaugh, Robert A. Groves, Kenneth J. Stein, Rich Volant, Seshadri Subbanna, V. S. Marangos, Stephen St. Onge, Ebenezer Eshun, P. Cooper, Jeffrey B. Johnson, Jae-Sung Rieh, Basanth Jagannathan, Vidhya Ramachandran, David Ahlgren, Dawn Wang, X. Wang:
Product applications and technology directions with SiGe BiCMOS. IEEE J. Solid State Circuits 38(9): 1471-1478 (2003) - 2002
- [j1]Greg G. Freeman, Mounir Meghelli, Young Kwark, Steven Zier, Alexander V. Rylyakov, Michael Sorna, Todd Tanji, Oswin M. Schreiber, Keith Walter, Jae-Sung Rieh, Basanth Jagannathan, Alvin J. Joseph, Seshadri Subbanna:
40-Gb/s circuits built from a 120-GHz fT SiGe technology. IEEE J. Solid State Circuits 37(9): 1106-1114 (2002)
Coauthor Index
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