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Journal Articles
- 2014
[j5]Nan-Chun Lien, Li-Wei Chu, Chien-Hen Chen, Hao-I Yang, Ming-Hsien Tu, Paul-Sen Kan, Yong-Jyun Hu, Ching-Te Chuang, Shyh-Jye Jou, Wei Hwang:
A 40 nm 512 kb Cross-Point 8 T Pipeline SRAM With Binary Word-Line Boosting Control, Ripple Bit-Line and Adaptive Data-Aware Write-Assist. IEEE Trans. Circuits Syst. I Regul. Pap. 61-I(12): 3416-3425 (2014)- 2012
- [j4]Chien-Yu Lu, Ming-Hsien Tu, Hao-I Yang, Ya-Ping Wu, Huan-Shun Huang, Yuh-Jiun Lin, Kuen-Di Lee, Yung-Shin Kao, Ching-Te Chuang, Shyh-Jye Jou, Wei Hwang:
A 0.33-V, 500-kHz, 3.94-µW 40-nm 72-Kb 9T Subthreshold SRAM With Ripple Bit-Line Structure and Negative Bit-Line Write-Assist. IEEE Trans. Circuits Syst. II Express Briefs 59-II(12): 863-867 (2012) - 2011
- [j3]Hao-I Yang, Wei Hwang, Ching-Te Chuang:
Impacts of gate-oxide breakdown on power-gated SRAM. Microelectron. J. 42(1): 101-112 (2011) - [j2]Hao-I Yang, Shyh-Chyi Yang, Wei Hwang, Ching-Te Chuang:
Impacts of NBTI/PBTI on Timing Control Circuits and Degradation Tolerant Design in Nanoscale CMOS SRAM. IEEE Trans. Circuits Syst. I Regul. Pap. 58-I(6): 1239-1251 (2011) - [j1]Hao-I Yang, Wei Hwang, Ching-Te Chuang:
Impacts of NBTI/PBTI and Contact Resistance on Power-Gated SRAM With High-kappa Metal-Gate Devices. IEEE Trans. Very Large Scale Integr. Syst. 19(7): 1192-1204 (2011)
Conference and Workshop Papers
- 2013
- [c10]Chi-Shin Chang, Hao-I Yang, Wei-Nan Liao, Yi-Wei Lin, Nan-Chun Lien, Chien-Hen Chen, Ching-Te Chuang, Wei Hwang, Shyh-Jye Jou, Ming-Hsien Tu, Huan-Shun Huang, Yong-Jyun Hu, Paul-Sen Kan, Cheng-Yo Cheng, Wei-Chang Wang, Jian-Hao Wang, Kuen-Di Lee, Chia-Cheng Chen, Wei-Chiang Shih:
A 40nm 1.0Mb pipeline 6T SRAM with variation-tolerant Step-Up Word-Line and Adaptive Data-Aware Write-Assist. ISCAS 2013: 1468-1471 - [c9]Wei-Nan Liao, Nan-Chun Lien, Chi-Shin Chang, Li-Wei Chu, Hao-I Yang, Ching-Te Chuang, Shyh-Jye Jou, Wei Hwang, Ming-Hsien Tu, Huan-Shun Huang, Jian-Hao Wang, Paul-Sen Kan, Yong-Jyun Hu:
A 40nm 1.0Mb 6T pipeline SRAM with digital-based Bit-Line Under-Drive, Three-Step-Up Word-Line, Adaptive Data-Aware Write-Assist with VCS tracking and Adaptive Voltage Detector for boosting control. SoCC 2013: 110-115 - 2012
- [c8]Hao-I Yang, Yi-Wei Lin, Mao-Chih Hsia, Geng-Cing Lin, Chi-Shin Chang, Yin-Nien Chen, Ching-Te Chuang, Wei Hwang, Shyh-Jye Jou, Nan-Chun Lien, Hung-Yu Li, Kuen-Di Lee, Wei-Chiang Shih, Ya-Ping Wu, Wen-Ta Lee, Chih-Chiang Hsu:
High-performance 0.6V VMIN 55nm 1.0Mb 6T SRAM with adaptive BL bleeder. ISCAS 2012: 1831-1834 - [c7]Yi-Wei Lin, Hao-I Yang, Geng-Cing Lin, Chi-Shin Chang, Ching-Te Chuang, Wei Hwang, Chia-Cheng Chen, Willis Shih, Huan-Shun Huang:
A 55nm 0.55v 6T SRAM with variation-tolerant dual-tracking word-line under-drive and data-aware write-assist. ISLPED 2012: 79-84 - [c6]Yung-Wei Lin, Hao-I Yang, Mao-Chih Hsia, Yi-Wei Lin, Chien-Hen Chen, Ching-Te Chuang, Wei Hwang, Nan-Chun Lien, Kuen-Di Lee, Wei-Chiang Shih, Ya-Ping Wu, Wen-Ta Lee, Chih-Chiang Hsu:
A 55nm 0.5V 128Kb cross-point 8T SRAM with data-aware dynamic supply Write-assist. SoCC 2012: 218-223 - [c5]Yi-Wei Lin, Ming-Chien Tsai, Hao-I Yang, Geng-Cing Lin, Shao-Cheng Wang, Ching-Te Chuang, Shyh-Jye Jou, Wei Hwang, Nan-Chun Lien, Kuen-Di Lee, Wei-Chiang Shih:
An all-digital Read Stability and Write Margin characterization scheme for CMOS 6T SRAM array. VLSI-DAT 2012: 1-4 - [c4]Ming-Chien Tsai, Yi-Wei Lin, Hao-I Yang, Ming-Hsien Tu, Wei-Chiang Shih, Nan-Chun Lien, Kuen-Di Lee, Shyh-Jye Jou, Ching-Te Chuang, Wei Hwang:
Embedded SRAM ring oscillator for in-situ measurement of NBTI and PBTI degradation in CMOS 6T SRAM array. VLSI-DAT 2012: 1-4 - 2011
- [c3]Hao-I Yang, Shih-Chi Yang, Mao-Chih Hsia, Yung-Wei Lin, Yi-Wei Lin, Chien-Hen Chen, Chi-Shin Chang, Geng-Cing Lin, Yin-Nien Chen, Ching-Te Chuang, Wei Hwang, Shyh-Jye Jou, Nan-Chun Lien, Hung-Yu Li, Kuen-Di Lee, Wei-Chiang Shih, Ya-Ping Wu, Wen-Ta Lee, Chih-Chiang Hsu:
A high-performance low VMIN 55nm 512Kb disturb-free 8T SRAM with adaptive VVSS control. SoCC 2011: 197-200 - 2009
- [c2]Hao-I Yang, Ching-Te Chuang, Wei Hwang:
Impacts of NBTI and PBTI on Power-gated SRAM with High-k Metal-gate Devices. ISCAS 2009: 377-380 - 2008
- [c1]Hao-I Yang, Ssu-Yun Lai, Wei Hwang:
Low-power floating bitline 8-T SRAM design with write assistant circuits. SoCC 2008: 239-242
Coauthor Index
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