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ORCIDMohamed H. Abu-Rahma
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2010 – 2019
- 2013
[c8]Animesh Datta, Mohamed H. Abu-Rahma, Sachin Dileep Dasnurkar, Hadi Rasouli, Sean Tamjidi, Ming Cai, Samit Sengupta, P. R. Chidambaram, Raghavan Thirumala, Nikhil Kulkarni, Prasanna Seeram, Prasad Bhadri, Prayag Patel, Sei Seung Yoon, Esin Terzioglu:
Analysis, modeling and silicon correlation of low-voltage flop data retention in 28nm process technology. ISQED 2013: 580-584- [c7]Sachin Dileep Dasnurkar, Animesh Datta, Mohamed H. Abu-Rahma, Hieu Nguyen, Martin Villafana, Hadi Rasouli, Sean Tamjidi, Ming Cai, Samit Sengupta, P. R. Chidambaram, Raghavan Thirumala, Nikhil Kulkarni, Prasanna Seeram, Prasad Bhadri, Prayag Patel, Sei Seung Yoon, Esin Terzioglu:
Experiments and analysis to characterize logic state retention limitations in 28nm process node. VTS 2013: 1-6 - 2011
- [c6]Mohamed H. Abu-Rahma, Ying Chen, Wing Sy, Wee Ling Ong, Leon Yeow Ting, Sei Seung Yoon, Michael Han, Esin Terzioglu:
Characterization of SRAM sense amplifier input offset for yield prediction in 28nm CMOS. CICC 2011: 1-4 - [c5]Rajamani Sethuram, Karim Arabi, Mohamed H. Abu-Rahma:
Leakage power profiling and leakage power reduction using DFT hardware. VTS 2011: 46-51 - 2010
- [j2]Mohamed H. Abu-Rahma, Mohab Anis, Sei Seung Yoon:
Reducing SRAM Power Using Fine-Grained Wordline Pulsewidth Control. IEEE Trans. Very Large Scale Integr. Syst. 18(3): 356-364 (2010)
2000 – 2009
- 2008
- [j1]Mohamed H. Abu-Rahma, Mohab Anis:
A Statistical Design-Oriented Delay Variation Model Accounting for Within-Die Variations. IEEE Trans. Comput. Aided Des. Integr. Circuits Syst. 27(11): 1983-1995 (2008) - [c4]Mohamed H. Abu-Rahma, Kinshuk Chowdhury, Joseph Wang, Zhiqin Chen, Sei Seung Yoon, Mohab Anis:
A methodology for statistical estimation of read access yield in SRAMs. DAC 2008: 205-210 - [c3]Mohamed H. Abu-Rahma, Mohab Anis, Sei Seung Yoon:
A robust single supply voltage SRAM read assist technique using selective precharge. ESSCIRC 2008: 234-237 - 2007
- [c2]Mohamed H. Abu-Rahma, Mohab Anis:
Variability in VLSI Circuits: Sources and Design Considerations. ISCAS 2007: 3215-3218 - 2005
- [c1]Mohab Anis, Mohamed H. Abu-Rahma:
Leakage Current Variability in Nanometer Technologies, invited. IWSOC 2005: 60-63
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