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Journal Articles
- 2006
[j4]Vincent Huard, Mickael Denais, C. R. Parthasarathy:
NBTI degradation: From physical mechanisms to modelling. Microelectron. Reliab. 46(1): 1-23 (2006)- [j3]C. R. Parthasarathy, Mickael Denais, Vincent Huard, G. Ribes, David Roy, Chloe Guérin
, F. Perrier, E. Vincent, Alain Bravaix:
Designing in reliability in advanced CMOS technologies. Microelectron. Reliab. 46(9-11): 1464-1471 (2006) - 2005
- [j2]Vincent Huard, Mickael Denais, F. Perrier, Nathalie Revil, C. R. Parthasarathy, Alain Bravaix, E. Vincent:
A thorough investigation of MOSFETs NBTI degradation. Microelectron. Reliab. 45(1): 83-98 (2005) - [j1]Alain Bravaix, Didier Goguenheim, Mickael Denais, Vincent Huard, C. R. Parthasarathy, F. Perrier, Nathalie Revil, E. Vincent:
Impacts of the recovery phenomena on the worst-case of damage in DC/AC stressed ultra-thin NO gate-oxide MOSFETs. Microelectron. Reliab. 45(9-11): 1370-1375 (2005)
Conference and Workshop Papers
- 2017
- [c5]Souhir Mhira, Vincent Huard, Ahmed Benhassain, Florian Cacho, Sylvie Naudet, Abhishek Jain, C. R. Parthasarathy, Alain Bravaix:
Dynamic aging compensation and Safety measures in Automotive environment. IOLTS 2017: 106-112 - [c4]Souhir Mhira, Vincent Huard, Ahmed Benhassain, Florian Cacho, David Meyer, Sylvie Naudet, Abhishek Jain, C. R. Parthasarathy, Alain Bravaix:
Cognitive approach to support dynamic aging compensation. ITC 2017: 1-7 - 2016
- [c3]Florian Cacho, Ahmed Benhassain, Souhir Mhira, Ajith Sivadasan, Vincent Huard, P. Cathelin, Vincent Knopik, Abhishek Jain, C. R. Parthasarathy, Lorena Anghel:
Activity profiling: Review of different solutions to develop reliable and performant design. IOLTS 2016: 47-50 - 2015
- [c2]Ahmed Benhassain, Florian Cacho, Vincent Huard, M. Saliva, Lorena Anghel, C. R. Parthasarathy, Abhishek Jain, Fabien Giner:
Timing in-situ monitors: Implementation strategy and applications results. CICC 2015: 1-4 - 2007
- [c1]C. R. Parthasarathy, Alain Bravaix, Chloe Guérin, Mickael Denais, Vincent Huard:
Design-In Reliability for 90-65nm CMOS Nodes Submitted to Hot-Carriers and NBTI Degradation. PATMOS 2007: 191-200
Coauthor Index
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