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ORCIDDidier Goguenheim
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2010 – 2019
- 2014
[c1]Florian Barrau
, Bruno Paille, Edith Kussener, Didier Goguenheim:
Distance measurement using narrowband ZigBee devices. WOCC 2014: 1-6
2000 – 2009
- 2009
- [j11]Christelle Bénard, Gaëtan Math, Pascal Fornara, Jean-Luc Ogier, Didier Goguenheim:
Influence of various process steps on the reliability of PMOSFETs submitted to negative bias temperature instabilities. Microelectron. Reliab. 49(9-11): 1008-1012 (2009) - 2008
- [j10]D. Pic, Didier Goguenheim, Jean-Luc Ogier:
Assessment of temperature and voltage accelerating factors for 2.3-3.2 nm SiO2 thin oxides stressed to hard breakdown. Microelectron. Reliab. 48(3): 335-341 (2008) - [j9]D. Pic, Arnaud Régnier, V. Pean, Jean-Luc Ogier, Didier Goguenheim:
Dynamic stress method for accurate NVM oxide robustness evaluation for automotive applications. Microelectron. Reliab. 48(8-9): 1318-1321 (2008) - 2007
- [j8]Didier Goguenheim, D. Pic, Jean-Luc Ogier:
Oxide reliability below 3 nm for advanced CMOS: Issues, characterization, and solutions. Microelectron. Reliab. 47(9-11): 1322-1329 (2007) - [j7]D. Pic, Didier Goguenheim, Jean-Luc Ogier:
A comprehensive study of stress induced leakage current using a floating gate structure for direct applications in EEPROM memories. Microelectron. Reliab. 47(9-11): 1373-1377 (2007) - 2005
- [j6]Didier Goguenheim, Alain Bravaix, S. Gomri, J. M. Moragues, C. Monserie, N. Legrand, Philippe Boivin:
Impact of wafer charging on hot carrier reliability and optimization of latent damage detection methodology in advanced CMOS technologies. Microelectron. Reliab. 45(3-4): 487-492 (2005) - [j5]C. Trapes, Didier Goguenheim, Alain Bravaix:
Experimental extraction of degradation parameters after constant voltage stress and substrate hot electron injection on ultrathin oxides. Microelectron. Reliab. 45(5-6): 883-886 (2005) - [j4]Alain Bravaix, Didier Goguenheim, Mickael Denais, Vincent Huard, C. R. Parthasarathy, F. Perrier, Nathalie Revil, E. Vincent:
Impacts of the recovery phenomena on the worst-case of damage in DC/AC stressed ultra-thin NO gate-oxide MOSFETs. Microelectron. Reliab. 45(9-11): 1370-1375 (2005) - 2004
- [j3]Alain Bravaix, Didier Goguenheim, Nathalie Revil, E. Vincent:
Hole injection enhanced hot-carrier degradation in PMOSFETs used for systems on chip applications with 6.5-2 nm thick gate-oxides. Microelectron. Reliab. 44(1): 65-77 (2004) - 2003
- [j2]Alain Bravaix, C. Trapes, Didier Goguenheim, Nathalie Revil, E. Vincent:
Carrier injection efficiency for the reliability study of 3.5-1.2 nm thick gate-oxide CMOS technologies. Microelectron. Reliab. 43(8): 1241-1246 (2003) - 2001
- [j1]Alain Bravaix, Didier Goguenheim, Nathalie Revil, E. Vincent:
Injection Mechanisms and Lifetime Prediction with the Substrate Voltage in 0.15mum Channel-Length N-MOSFETs. Microelectron. Reliab. 41(9-10): 1313-1318 (2001)
Coauthor Index
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