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Giovanni Santin

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2010 – 2019

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2016
[c3]
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  dblp key:
  - conf/isscc/TanakaHVGKPYPEG16
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  - https://dblp.org/rec/conf/isscc/TanakaHVGKPYPEG16
Tomoharu Tanaka, Mark Helm, Tommaso Vali, Ramin Ghodsi, Koichi Kawai, Jae-Kwan Park, Shigekazu Yamada, Feng Pan, Yuichi Einaga, Ali Ghalam, Toru Tanzawa, Jason Guo, Takaaki Ichikawa, Erwin Yu, Satoru Tamada, Tetsuji Manabe, Jiro Kishimoto, Yoko Oikawa, Yasuhiro Takashima, Hidehiko Kuge, Midori Morooka, Ali Mohammadzadeh, Jong Kang, Jeff Tsai, Emanuele Sirizotti, Eric Lee, Luyen Vu, Yuxing Liu, Hoon Choi, Kwonsu Cheon, Daesik Song, Daniel Shin, Jung Hee Yun, Michele Piccardi, Kim-Fung Chan, Yogesh Luthra, Dheeraj Srinivasan, Srinivasarao Deshmukh, Kalyan Kavalipurapu, Dan Nguyen, Girolamo Gallo, Sumant Ramprasad, Michelle Luo, Qiang Tang, Michele Incarnati, Agostino Macerola, Luigi Pilolli, Luca De Santis, Massimo Rossini, Violante Moschiano, Giovanni Santin, Bernardino Tronca, Hyunseok Lee, Vipul Patel, Ted Pekny, Aaron Yip, Naveen Prabhu, Purval Sule, Trupti Bemalkhedkar, Kiranmayee Upadhyayula, Camila Jaramillo:
7.7 A 768Gb 3b/cell 3D-floating-gate NAND flash memory. ISSCC 2016: 142-144
2014
[j1]
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  - journals/jcphy/KaramitrosLBABDFFIIMNSTSI14
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Mathieu Karamitros, S. Luan, Mario A. Bernal, J. Allison, Gérard Baldacchino, M. Davidkova, Ziad Francis, W. Friedland, Vladimir Ivanchenko, A. Ivantchenko, Alfonso Mantero, P. Nieminem, Giovanni Santin, H. N. Tran, Vaclav Stepan, Sébastien Incerti:
Diffusion-controlled reactions modeling in Geant4-DNA. J. Comput. Phys. 274: 841-882 (2014)
2013
[c2]
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  - conf/isscc/NasoBCCCCDSCFGGILMMMOPPPPRRRSSSSTMGFVHG13
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Giovanni Naso, L. Botticchio, M. Castelli, C. Cerafogli, M. Cichocki, P. Conenna, Andrea D'Alessandro, Luca De Santis, Domenico Di Cicco, W. Di Francesco, M. L. Gallese, Girolamo Gallo, Michele Incarnati, C. Lattaro, Agostino Macerola, G. G. Marotta, Violante Moschiano, D. Orlandi, F. Paolini, S. Perugini, Luigi Pilolli, P. Pistilli, G. Rizzo, F. Rori, Massimo Rossini, Giovanni Santin, Emanuele Sirizotti, A. Smaniotto, U. Siciliani, Marco Tiburzi, R. Meyer, A. Goda, B. Filipiak, Tommaso Vali, Mark Helm, Ramin Ghodsi:
A 128Gb 3b/cell NAND flash design using 20nm planar-cell technology. ISSCC 2013: 218-219
2010
[c1]
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  - conf/isscc/MarottaMDTCLMRSPINSBSPGITCPMFGHCORRVGR10
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G. G. Marotta, Agostino Macerola, Andrea D'Alessandro, A. Torsi, C. Cerafogli, C. Lattaro, C. Musilli, D. Rivers, Emanuele Sirizotti, F. Paolini, G. Imondi, G. Naso, Giovanni Santin, L. Botticchio, Luca De Santis, Luigi Pilolli, M. L. Gallese, Michele Incarnati, Marco Tiburzi, P. Conenna, S. Perugini, Violante Moschiano, W. Di Francesco, Matt Goldman, Chris Haid, Domenico Di Cicco, D. Orlandi, F. Rori, Massimo Rossini, Tommaso Vali, Ramin Ghodsi, Frank Roohparvar:
A 3bit/cell 32Gb NAND flash memory at 34nm with 6MB/s program throughput and with dynamic 2b/cell blocks configuration mode for a program throughput increase up to 13MB/s. ISSCC 2010: 444-445

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