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2020 – today
- 2022
[c3]Ted Pekny, Luyen Vu, Jeff Tsai, Dheeraj Srinivasan, Erwin Yu, Jonathan Pabustan, Joe Xu, Srinivas Deshmukh, Kim-Fung Chan, Michael Piccardi, Kevin Xu, Guan Wang, Kaveh Shakeri, Vipul Patel, Tomoko Iwasaki, Tongji Wang, Padma Musunuri, Carl Gu, Ali Mohammadzadeh, Ali Ghalam, Violante Moschiano, Tommaso Vali, Jae-Kwan Park, June Lee, Ramin Ghodsi:
A 1-Tb Density 4b/Cell 3D-NAND Flash on 176-Tier Technology with 4-Independent Planes for Read using CMOS-Under-the-Array. ISSCC 2022: 1-3
2010 – 2019
- 2016
- [c2]Tomoharu Tanaka, Mark Helm, Tommaso Vali, Ramin Ghodsi, Koichi Kawai, Jae-Kwan Park, Shigekazu Yamada, Feng Pan, Yuichi Einaga, Ali Ghalam, Toru Tanzawa
, Jason Guo, Takaaki Ichikawa, Erwin Yu, Satoru Tamada, Tetsuji Manabe, Jiro Kishimoto, Yoko Oikawa, Yasuhiro Takashima, Hidehiko Kuge, Midori Morooka, Ali Mohammadzadeh, Jong Kang, Jeff Tsai, Emanuele Sirizotti, Eric Lee, Luyen Vu, Yuxing Liu, Hoon Choi, Kwonsu Cheon, Daesik Song, Daniel Shin, Jung Hee Yun, Michele Piccardi, Kim-Fung Chan, Yogesh Luthra, Dheeraj Srinivasan, Srinivasarao Deshmukh, Kalyan Kavalipurapu, Dan Nguyen, Girolamo Gallo, Sumant Ramprasad, Michelle Luo, Qiang Tang, Michele Incarnati, Agostino Macerola, Luigi Pilolli, Luca De Santis, Massimo Rossini, Violante Moschiano, Giovanni Santin, Bernardino Tronca, Hyunseok Lee, Vipul Patel, Ted Pekny, Aaron Yip, Naveen Prabhu, Purval Sule, Trupti Bemalkhedkar, Kiranmayee Upadhyayula, Camila Jaramillo:
7.7 A 768Gb 3b/cell 3D-floating-gate NAND flash memory. ISSCC 2016: 142-144 - 2014
- [c1]Mark Helm, Jae-Kwan Park, Ali Ghalam, Jason Guo, Chang-Wan Ha, Cairong Hu, Heonwook Kim, Kalyan Kavalipurapu, Eric Lee, Ali Mohammadzadeh, Dan Nguyen, Vipul Patel, Ted Pekny, Bill Saiki, Daesik Song, Jeff Tsai, Vimon Viajedor, Luyen Vu, Tinwai Wong, Jung Hee Yun, Ramin Ghodsi, Andrea D'Alessandro, Domenico Di Cicco, Violante Moschiano:
19.1 A 128Gb MLC NAND-Flash device using 16nm planar cell. ISSCC 2014: 326-327
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