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ORCIDDonald A. Gajewski
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- affiliation: Wolfspeed, Inc., Durham, NC, USA
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Journal Articles
- 2018
[j2]Donald A. Gajewski, Satyaki Ganguly, Scott T. Sheppard, Simon Wood, Jeff B. Barner, Jim W. Milligan, John Palmour:
Reliability comparison of 28V-50V GaN-on-SiC S-band and X-band technologies. Microelectron. Reliab. 84: 1-6 (2018)- 2014
- [j1]Donald A. Gajewski, Randall D. Lewis, Benjamin M. Decker:
Analysis and resolution of a thermally accelerated early life failure mechanism in a 40 V GaN FET. Microelectron. Reliab. 54(12): 2675-2681 (2014)
Conference and Workshop Papers
- 2024
- [c8]Ayan K. Biswas, Daniel J. Lichtenwalner, Jae-Hyung Park, Brett Hull, Satyaki Ganguly, Donald A. Gajewski, Elif Balkas:
Hole-Induced Threshold Voltage Instability Under High Positive and Negative Gate Stress in SiC MOSFETs. IRPS 2024: 1-5 - 2023
- [c7]In-Hwan Ji, Anoop Mathew, Jae-Hyung Park, Neal Oldham, Matthew McCain, Shadi Sabri, Edward Van Brunt, Brett Hull, Daniel J. Lichtenwalner, Donald A. Gajewski, John W. Palmour:
High Temperature and High Humidity Reliability Evaluation of Large-Area 1200V and 1700V SiC Diodes. IRPS 2023: 1-4 - [c6]Yueying Liu, John Wood, Zongyang Hu, Satyaki Ganguly, Jeremy Fisher, Mike Watts, Scott T. Sheppard, Donald A. Gajewski, Basim Noori:
GaN HEMTs Design and Modeling for 5G. IRPS 2023: 1-4 - 2022
- [c5]Satyaki Ganguly, Daniel J. Lichtenwalner, Caleb Isaacson, Donald A. Gajewski, Philipp Steinmann, Ryan Foarde, Brett Hull, Sei-Hyung Ryu, Scott Allen, John W. Palmour:
Negative Gate Bias TDDB evaluation of n-Channel SiC Vertical Power MOSFETs. IRPS 2022: 8 - [c4]Satyaki Ganguly, Kyle M. Bothe, Alexandre Niyonzima, Thomas Smith, Yueying Liu, Jeremy Fisher, Fabian Radulescu, Donald A. Gajewski, Scott T. Sheppard, Jim W. Milligan, Basim Noori, John W. Palmour:
DC and RF Reliability Assessment of 5G-MMW capable GaN HEMT Process (Invited). IRPS 2022: 11 - 2020
- [c3]Don A. Gajewski:
Challenges and Peculiarities in Developing New Standards for SiC. IRPS 2020: 1-5 - 2019
- [c2]Bruce Schmukler, Jeffrey Barner, Jeremy Fisher, Donald A. Gajewski, Scott T. Sheppard, Jim W. Milligan, Kyle M. Bothe, Satyaki Ganguly, Terry Alcorn, Jennifer Gao, Chris Hardiman, Evan Jones, Dan Namishia, Fabian Radulescu:
A High Efficiency, Ka-Band, GaN-on-SiC MMIC with Low Compression. BCICTS 2019: 1-4 - 2018
- [c1]Daniel J. Lichtenwalner
, Brett Hull, Edward Van Brunt, Shadi Sabri, Donald A. Gajewski, Dave Grider, Scott Allen, John W. Palmour, Akin Akturk, James McGarrity:
Reliability studies of SiC vertical power MOSFETs. IRPS 2018: 2
Coauthor Index
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