"Negative Gate Bias TDDB evaluation of n-Channel SiC Vertical Power MOSFETs."

Satyaki Ganguly et al. (2022)

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DOI: 10.1109/IRPS48227.2022.9764608

access: closed

type: Conference or Workshop Paper

metadata version: 2022-05-09

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Satyaki Ganguly, Daniel J. Lichtenwalner, Caleb Isaacson, Donald A. Gajewski, Philipp Steinmann, Ryan Foarde, Brett Hull, Sei-Hyung Ryu, Scott Allen, John W. Palmour:
Negative Gate Bias TDDB evaluation of n-Channel SiC Vertical Power MOSFETs. IRPS 2022: 8

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