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ORCIDAntonio Arreghini
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Books and Theses
- 2008
[b1]Antonio Arreghini:
Characterization and modeling of Non volatile memory cells based on localized trapping materials. University of Udine, Italy, 2008
Journal Articles
- 2014
- [j1]Lifang Liu, Antonio Arreghini, Geert Van den Bosch, Liyang Pan, Jan Van Houdt:
Assessment methodology of the lateral migration component in data retention of 3D SONOS memories. Microelectron. Reliab. 54(9-10): 1697-1701 (2014)
Conference and Workshop Papers
- 2024
- [c11]Laurent Breuil, R. Izmailov, Mihaela Ioana Popovici, J. Stiers, Antonio Arreghini, S. Ramesh, Geert Van den Bosch, Jan Van Houdt, Maarten Rosmeulen:
Gate Side Injection Operating Mode for 3D NAND Flash Memories. IMW 2024: 1-4 - [c10]S. Rachidi, S. Ramesh, Davide Tierno, G. L. Donadio, A. Pacco, J. W. Maes, Y. Jeong, Antonio Arreghini, Geert Van den Bosch, Maarten Rosmeulen:
Pure-Metal Replacement Gate for Reliable 30 nm Pitch Scaled 3D NAND Flash. IMW 2024: 1-4 - [c9]Yusuke Higashi, J. P. Bastos, Adrian Vaisman Chasin, Laurent Breuil, Antonio Arreghini, S. Ramesh, S. Rachidi, Y. Jeong, Geert Van den Bosch, Maarten Rosmeulen:
Investigation of the Impact of Ferroelectricity Boosted Gate Stacks for 3D NAND on Short Time Data Retention and Endurance. IRPS 2024: 1-6 - [c8]D. Tiernc, Antonio Arreghini, Alicja Lesniewska, Y. Jeong, Marleen H. van der Veen, J. Stiers, N. Bazzazian, Ivan Ciofi, Geert Van den Bosch, Maarten Rosmeulen:
Exploring the Reliability Limits for the Z-Pitch Scaling of Molybdenum Inter-Word Line Oxides in 3D NAND. IRPS 2024: 1-5 - 2023
- [c7]Laurent Breuil, Mihaela Ioana Popovici, J. Stiers, Antonio Arreghini, S. Ramesh
, Geert Van den Bosch, Jan Van Houdt, Maarten Rosmeulen:
Optimization of Retention in Ferroelectricity Boosted Gate Stacks for 3D NAND. IMW 2023: 1-4 - [c6]S. Rachidi, S. Ramesh, Laurent Breuil, Z. Tao, Devin Verreck, G. L. Donadio, Antonio Arreghini, Geert Van den Bosch, Maarten Rosmeulen:
Enabling 3D NAND Trench Cells for Scaled Flash Memories. IMW 2023: 1-4 - 2022
- [c5]Laurent Breuil, L. Nyns, S. Rachidi, K. Banerjee, Antonio Arreghini, J. P. Bastos, S. Ramesh, Geert Van den Bosch, Maarten Rosmeulen:
High-K incorporated in a SiON tunnel layer for 3D NAND programming voltage reduction. IMW 2022: 1-4 - [c4]S. Rachidi, Antonio Arreghini, Devin Verreck, G. L. Donadio, K. Banerjee, K. Katcko, Yusuke Oniki, Geert Van den Bosch, Maarten Rosmeulen:
At the Extreme of 3D-NAND Scaling: 25 nm Z-Pitch with 10 nm Word Line Cells. IMW 2022: 1-4 - [c3]Maarten Rosmeulen, Cesar J. Lockhart de la Rosa, K. Willems, S. Fransen, B.-Y. Shih, Devin Verreck, V. Kalangi, F. Yasin, Harold Philipsen, Y. T. Set, N. Ronchi, W. Van Roy, O. Y. F. Henry, Antonio Arreghini, Geert Van den Bosch, Arnaud Furnémont:
Liquid Memory and the Future of Data Storage. IMW 2022: 1-4 - 2021
- [c2]Franz Schanovsky, Devin Verreck, Antonio Arreghini, Gerhard Rzepa, Zlatan Stanojevic, Christian Kernstock, Oskar Baumgartner, Maarten Rosmeulen, Markus Karner:
A TCAD Compatible SONOS Trapping Layer Model for Accurate Programming Dynamics. IMW 2021: 1-4 - 2019
- [c1]Anastasiia Kruv, Antonio Arreghini, Mario Gonzalez, Devin Verreck, Geert Van den Bosch, Ingrid De Wolf, Arnaud Furnémont:
Impact of Mechanical Stress on the Electrical Performance of 3D NAND. IRPS 2019: 1-5
Coauthor Index
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