"High-K incorporated in a SiON tunnel layer for 3D NAND programming voltage ..."

Laurent Breuil et al. (2022)

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DOI: 10.1109/IMW52921.2022.9779307

access: closed

type: Conference or Workshop Paper

metadata version: 2024-05-29

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Laurent Breuil, L. Nyns, S. Rachidi, K. Banerjee, Antonio Arreghini, J. P. Bastos, S. Ramesh, Geert Van den Bosch, Maarten Rosmeulen:
High-K incorporated in a SiON tunnel layer for 3D NAND programming voltage reduction. IMW 2022: 1-4

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