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ORCIDCedric Duperrier
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2010 – 2019
- 2016
[j4]Alexis Divay, Cedric Duperrier, Farid Temcamani, Olivier Latry
:
Effects of drain quiescent voltage on the ageing of AlGaN/GaN HEMT devices in pulsed RF mode. Microelectron. Reliab. 64: 585-588 (2016)- 2015
- [j3]Alexis Divay, Mohamed Masmoudi, Olivier Latry, Cedric Duperrier, Farid Temcamani:
An athermal measurement technique for long time constants traps characterization in GaN HEMT transistors. Microelectron. Reliab. 55(9-10): 1703-1707 (2015) - 2014
- [c5]Frederic Drillet, Mohamad Hamieh, Lounis Zerioul, Alexandre Briere, Eren Unlu, Myriam Ariaudo, Yves Louët, Emmanuelle Bourdel, Julien Denoulet, Andréa Pinna, Bertrand Granado, Patrick Garda, François Pêcheux, Cedric Duperrier, Sébastien Quintanel, Philippe Meunier, Christophe Moy, Olivier Romain:
Flexible Radio Interface for NoC RF-Interconnect. DSD 2014: 36-41 - [c4]Jean-Baptiste Fonder, Olivier Latry, Farid Temcamani, Cedric Duperrier:
Channel temperature estimation of AlGaN/GaN HEMT for pulsed RADAR applications using infrared thermography and electrical characterization. ICMCS 2014: 1405-1408 - [c3]Liang Zhou, Myriam Ariaudo, Cedric Duperrier, Sébastien Quintanel, Emmanuelle Bourdel:
Power adaptive receiver based on wide-band distributed low noise amplifier for home wireless networks. NEWCAS 2014: 317-320 - [c2]Eren Unlu, Mohamad Hamieh, Christophe Moy, Myriam Ariaudo, Yves Louët, Frederic Drillet, Alexandre Briere, Lounis Zerioul, Julien Denoulet, Andréa Pinna, Bertrand Granado, François Pêcheux, Cedric Duperrier, Sébastien Quintanel, Olivier Romain, Emmanuelle Bourdel:
An OFDMA based RF interconnect for massive multi-core processors. NOCS 2014: 182-183 - 2013
- [c1]Liang Zhou, Cedric Duperrier, Sébastien Quintanel, Sofiane Aloui, Emmanuelle Bourdel:
A 0.8-11GHz 0.15μm pHEMT reconfigurable low power consumption distributed low noise amplifier for wireless home networks. NEWCAS 2013: 1-4 - 2012
- [j2]Jean-Baptiste Fonder, Laetitia Chevalier, Cédric Genevois, Olivier Latry, Cedric Duperrier, Farid Temcamani, Hichame Maanane:
Physical analysis of Schottky contact on power AlGaN/GaN HEMT after pulsed-RF life test. Microelectron. Reliab. 52(9-10): 2205-2209 (2012) - [j1]Jean-Baptiste Fonder, Olivier Latry, Cedric Duperrier, M. Stanislawiak, Hichame Maanane, Philippe Eudeline, Farid Temcamani:
Compared deep class-AB and class-B ageing on AlGaN/GaN HEMT in S-Band pulsed-RF operating life. Microelectron. Reliab. 52(11): 2561-2567 (2012)
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