"Effects of drain quiescent voltage on the ageing of AlGaN/GaN HEMT devices ..."

Alexis Divay et al. (2016)

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DOI: 10.1016/J.MICROREL.2016.07.123

access: closed

type: Journal Article

metadata version: 2021-04-09

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Alexis Divay, Cedric Duperrier, Farid Temcamani, Olivier Latry:
Effects of drain quiescent voltage on the ageing of AlGaN/GaN HEMT devices in pulsed RF mode. Microelectron. Reliab. 64: 585-588 (2016)

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