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2010 – 2019
- 2017
[c5]Zineb M'Harzi, Mustapha Alami, Farid Temcamani:
Novel current-controlled negative resistance based on simplified negative current-controlled conveyors. ATSIP 2017: 1-6- 2016
- [j4]Alexis Divay, Cedric Duperrier, Farid Temcamani, Olivier Latry
:
Effects of drain quiescent voltage on the ageing of AlGaN/GaN HEMT devices in pulsed RF mode. Microelectron. Reliab. 64: 585-588 (2016) - 2015
- [j3]Alexis Divay, Mohamed Masmoudi, Olivier Latry, Cedric Duperrier, Farid Temcamani:
An athermal measurement technique for long time constants traps characterization in GaN HEMT transistors. Microelectron. Reliab. 55(9-10): 1703-1707 (2015) - [c4]Zineb M'Harzi, Mustapha Alami, Farid Temcamani:
A novel high bandwidth current mode instrumentation amplifier. ICM 2015: 299-302 - 2014
- [c3]Jean-Baptiste Fonder, Olivier Latry, Farid Temcamani, Cedric Duperrier:
Channel temperature estimation of AlGaN/GaN HEMT for pulsed RADAR applications using infrared thermography and electrical characterization. ICMCS 2014: 1405-1408 - [c2]Rami Rami, Mustapha Alami, Farid Temcamani, Yahya Lakys, Bruno Delacressonniere, Moulhime El Bekkali:
Low power agile active filter with digitally controlled center-frequency. ICMCS 2014: 1528-1534 - 2012
- [j2]Jean-Baptiste Fonder, Laetitia Chevalier, Cédric Genevois, Olivier Latry, Cedric Duperrier, Farid Temcamani, Hichame Maanane:
Physical analysis of Schottky contact on power AlGaN/GaN HEMT after pulsed-RF life test. Microelectron. Reliab. 52(9-10): 2205-2209 (2012) - [j1]Jean-Baptiste Fonder, Olivier Latry, Cedric Duperrier, M. Stanislawiak, Hichame Maanane, Philippe Eudeline, Farid Temcamani:
Compared deep class-AB and class-B ageing on AlGaN/GaN HEMT in S-Band pulsed-RF operating life. Microelectron. Reliab. 52(11): 2561-2567 (2012) - 2010
- [c1]Cristian Andriesei, Liviu Goras, Farid Temcamani, Bruno Delacressonniere:
Improved RF CMOS active inductor with high self resonant frequency. ICECS 2010: 1092-1095
Coauthor Index
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