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"Physical analysis of Schottky contact on power AlGaN/GaN HEMT after ..."

Jean-Baptiste Fonder et al. (2012)

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DOI: 10.1016/J.MICROREL.2012.06.053

access: closed

type: Journal Article

metadata version: 2022-10-02

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Jean-Baptiste Fonder, Laetitia Chevalier, Cédric Genevois, Olivier Latry, Cedric Duperrier, Farid Temcamani, Hichame Maanane:
Physical analysis of Schottky contact on power AlGaN/GaN HEMT after pulsed-RF life test. Microelectron. Reliab. 52(9-10): 2205-2209 (2012)

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