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ORCIDJonghoon J. Kim
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2020 – today
- 2021
[c14]Sung Joo Park, Jonghoon J. Kim, Kun Joo, Young-Ho Lee, Kyoungsun Kim, Young-Tae Kim, Woo-Jin Na, IkJoon Choi, Hye-Seung Yu, Wonyoung Kim, Ju-Yeon Jung, Jaejun Lee, Dohyung Kim, Young-Uk Chang, Gong-Heum Han, Hangi-Jung, Sunwon Kang, Jeonghyeon Cho, Hoyoung Song, Tae-Young Oh, Young-Soo Sohn, SangJoon Hwang, Jooyoung Lee:
Industry's First 7.2 Gbps 512GB DDR5 Module. HCS 2021: 1-11
2010 – 2019
- 2015
- [c13]Sumin Choi, Heegon Kim, Daniel H. Jung, Jonghoon J. Kim, Jaemin Lim, Hyunsuk Lee, Kyungjun Cho, Joungho Kim, Hyungsoo Kim, Yong-Ju Kim, Yunsaing Kim:
Crosstalk-included eye-diagram estimation for high-speed silicon, organic, and glass interposer channels on 2.5D/3D IC. 3DIC 2015: TS8.25.1-TS8.25.5 - [c12]Daniel H. Jung, Heegon Kim, Jonghoon J. Kim, Sukjin Kim, Joungho Kim, Hyun-Cheol Bae, Kwang-Seong Choi:
Modeling and analysis of defects in through silicon via channel for non-invasive fault isolation. 3DIC 2015: TS8.29.1-TS8.29.4 - [c11]Jonghoon J. Kim, Daniel H. Jung, Heegon Kim, Sunkyu Kong, Sumin Choi, Jaemin Lim, Joungho Kim:
TSV-based current probing structure using magnetic coupling in 2.5D and 3D IC. EMC Compo 2015: 212-215 - [c10]Jaemin Lim, Manho Lee
, Daniel H. Jung, Jonghoon J. Kim, Sumin Choi, Hyunsuk Lee, Joungho Kim:
Shielding structures for through silicon via (TSV) to active circuit noise coupling in 3D IC. EMC Compo 2015: 248-251 - 2014
- [j2]Yangbae Chun, Seongwook Park, Jonghoon J. Kim, Jiseong Kim, Hongseok Kim, Joungho Kim, Nam Kim, Seungyoung Ahn:
Electromagnetic Compatibility of Resonance Coupling Wireless Power Transfer in On-Line Electric Vehicle System. IEICE Trans. Commun. 97-B(2): 416-423 (2014) - [c9]Daniel H. Jung, Heegon Kim, Jonghoon J. Kim, Sukjin Kim, Joungho Kim, Hyun-Cheol Bae, Kwang-Seong Choi:
Fault detection and isolation of multiple defects in through silicon via (TSV) channel. 3DIC 2014: 1-5 - [c8]Jonghoon J. Kim, Bumhee Bae, Sukjin Kim, Sunkyu Kong, Heegon Kim, Daniel H. Jung, Joungho Kim:
Magnetically-coupled current probing structure consisting of TSVs and RDLs in 2.5D and 3D ICs. 3DIC 2014: 1-6 - 2013
- [j1]Jiseong Kim, Jonghoon J. Kim, Sunkyu Kong, Hongseok Kim, In-Soo Suh, Nam Pyo Suh, Dong-Ho Cho, Joungho Kim, Seungyoung Ahn:
Coil Design and Shielding Methods for a Magnetic Resonant Wireless Power Transfer System. Proc. IEEE 101(6): 1332-1342 (2013) - [c7]Daniel H. Jung, Jonghyun Cho, Heegon Kim, Jonghoon J. Kim, Hongseok Kim, Joungho Kim, Hyun-Cheol Bae, Kwang-Seong Choi:
Fault isolation of short defect in through silicon via (TSV) based 3D-IC. 3DIC 2013: 1-4 - [c6]Heegon Kim, Jonghyun Cho, Jonghoon J. Kim, Daniel H. Jung, Sumin Choi, Joungho Kim, Junho Lee, Kunwoo Park:
Eye-diagram simulation and analysis of a high-speed TSV-based channel. 3DIC 2013: 1-7 - [c5]Jonghoon J. Kim, Heegon Kim, Sukjin Kim, Bumhee Bae, Daniel H. Jung, Sunkyu Kong, Joungho Kim, Junho Lee, Kunwoo Park:
Non-contact wafer-level TSV connectivity test methodology using magnetic coupling. 3DIC 2013: 1-4 - [c4]Heegon Kim, Jonghyun Cho, Daniel H. Jung, Jonghoon J. Kim, Sumin Choi, Joungho Kim, Junho Lee, Kunwoo Park:
Design and measurement of a compact on-interposer passive equalizer for chip-to-chip high-speed differential signaling. EMC Compo 2013: 5-9 - [c3]Jonghoon J. Kim, Heegon Kim, Sukjin Kim, Bumhee Bae, Daniel H. Jung, Sunkyu Kong, Joungho Kim, Junho Lee, Kunwoo Park:
Design of contactless wafer-level TSV connectivity testing structure using capacitive coupling. EMC Compo 2013: 158-162 - [c2]Daniel H. Jung, Heegon Kim, Jonghoon J. Kim, Joungho Kim, Hyun-Cheol Bae, Kwang-Seong Choi:
Modeling and analysis of open defect in through silicon via (TSV) channel. EMC Compo 2013: 163-166 - [c1]Bumhee Bae, Sunkyu Kong, Jonghoon J. Kim, Sukjin Kim, Joungho Kim:
Magnetic field coupling on analog-to-digital converter from wireless power transfer system in automotive environment. EMC Compo 2013: 238-242
Coauthor Index
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