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2020 – today
- 2022
[j4]Golnaz Korkian
, Daniel León, Francisco J. Franco, Juan Carlos Fabero, Manon Letiche, Yolanda Morilla, Pedro Martín-Holgado, Helmut Puchner, Hortensia Mecha, Juan Antonio Clemente:
Single Event Upsets Under Proton, Thermal, and Fast Neutron Irradiation in Emerging Nonvolatile Memories. IEEE Access 10: 114566-114585 (2022)- 2021
- [j3]Carlos J. González, Bruno L. Costa, Diego N. Machado, Rafael Galhardo Vaz, Alexis C. Vilas Bôas, Odair Lelis Gonçalez, Helmut Puchner, Fernanda Lima Kastensmidt, Nilberto H. Medina, Marcilei Aparecida Guazzelli, Tiago Roberto Balen:
Failure Mechanism and Sampling Frequency Dependency on TID Response of SAR ADCs. J. Electron. Test. 37(3): 329-343 (2021) - [c4]Mohammadreza Rezaei, Francisco J. Franco, Juan Carlos Fabero, Hortensia Mecha, Helmut Puchner, Juan Antonio Clemente:
Impact of DVS on Power Consumption and SEE Sensitivity of COTS Volatile SRAMs. LATS 2021: 1-6 - 2020
- [c3]Lucas Matana Luza, Daniel Söderström, Georgios Tsiligiannis, Helmut Puchner, Carlo Cazzaniga, Ernesto Sánchez, Alberto Bosio, Luigi Dilillo:
Investigating the Impact of Radiation-Induced Soft Errors on the Reliability of Approximate Computing Systems. DFT 2020: 1-6 - [c2]Lucas Matana Luza, Daniel Söderström, Helmut Puchner, Rubén García Alía, Manon Letiche, Alberto Bosio, Luigi Dilillo:
Effects of Thermal Neutron Irradiation on a Self-Refresh DRAM. DTIS 2020: 1-6
2000 – 2009
- 2007
- [j2]Helmut Puchner:
NBTI product level reliability for a low-power SRAM technology. Microelectron. Reliab. 47(6): 873-879 (2007) - 2004
- [c1]Y. Z. Xu, O. Pohland, C. Cai, Helmut Puchner:
Leakage Increase of Narrow and Short BCPMOS. ISQED 2004: 51-54 - 2001
- [j1]Helmut Puchner, Y.-C. Liu, W. Kong, F. Duan, R. Castagnetti:
Substrate Engineering to Improve Soft-Error-Rate Immunity for SRAM Technologies. Microelectron. Reliab. 41(9-10): 1319-1324 (2001)
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