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ORCIDSylvain L. Delage
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2010 – 2019
- 2018
[j10]Mourad Oualli, Christian Dua, O. Patard, P. Altuntas, S. Piotrowicz, Piero Gamarra, Cedric Lacam, J.-C. Jacquet, L. Teisseire, D. Lancereau, Eric Chartier, C. Potier, Sylvain L. Delage:
Stability and robustness of InAlGaN/GaN HEMT in short-term DC tests for different passivation schemes. Microelectron. Reliab. 88-90: 418-422 (2018)- 2014
- [j9]Isabella Rossetto, Fabiana Rampazzo, Matteo Meneghini
, Marco Silvestri, Christian Dua, Piero Gamarra, Raphael Aubry, Marie-Antoinette di Forte-Poisson, O. Patard, Sylvain L. Delage, Gaudenzio Meneghesso, Enrico Zanoni:
Influence of different carbon doping on the performance and reliability of InAlN/GaN HEMTs. Microelectron. Reliab. 54(9-10): 2248-2252 (2014) - [c1]Isabella Rossetto, Fabiana Rampazzo, Simone Gerardin, Matteo Meneghini, Marta Bagatin, Alberto Zanandrea, Alessandro Paccagnella, Gaudenzio Meneghesso, Enrico Zanoni, Christian Dua, Marie-Antoinette di Forte-Poisson, Raphael Aubry, Mourad Oualli, Sylvain L. Delage:
Degradation of dc and pulsed characteristics of InAlN/GaN HEMTs under different proton fluences. ESSDERC 2014: 381-384 - 2013
- [j8]Isabella Rossetto, Fabiana Rampazzo, Riccardo Silvestri, Alberto Zanandrea, Christian Dua, Sylvain L. Delage, Mourad Oualli, Matteo Meneghini, Enrico Zanoni, Gaudenzio Meneghesso:
Comparison of the performances of an InAlN/GaN HEMT with a Mo/Au gate or a Ni/Pt/Au gate. Microelectron. Reliab. 53(9-11): 1476-1480 (2013) - 2012
- [j7]Jaroslav Kovác, Alexander Satka, Ales Chvála, D. Donoval, Peter Kordos, Sylvain L. Delage:
Gate leakage current in GaN-based mesa- and planar-type heterostructure field-effect transistors. Microelectron. Reliab. 52(7): 1323-1327 (2012) - [j6]Clemens Ostermaier, Peter Lagger, Mohammed Alomari, Patrick Herfurth, David Maier, Alexander Alexewicz, Marie-Antoinette di Forte-Poisson, Sylvain L. Delage, Gottfried Strasser, Dionyz Pogany, Erhard Kohn:
Reliability investigation of the degradation of the surface passivation of InAlN/GaN HEMTs using a dual gate structure. Microelectron. Reliab. 52(9-10): 1812-1815 (2012)
2000 – 2009
- 2005
- [j5]A. Sozza, Christian Dua, Erwan Morvan, Bertrand Grimbert, Sylvain L. Delage:
A 3000 hours DC Life Test on AlGaN/GaN HEMT for RF and microwave applications. Microelectron. Reliab. 45(9-11): 1617-1621 (2005) - 2004
- [j4]A. Sozza, Christian Dua, Erwan Morvan, Bertrand Grimbert, V. Hoel, Sylvain L. Delage, N. Chaturvedi, Richard Lossy, Joachim Würfl:
Reliability Investigation of Gallium Nitride HEMT. Microelectron. Reliab. 44(9-11): 1369-1373 (2004) - 2003
- [j3]Sylvain L. Delage, Christian Dua:
Wide band gap semiconductor reliability : Status and trends. Microelectron. Reliab. 43(9-11): 1705-1712 (2003) - 2001
- [j2]Sylvain L. Delage:
Heterojunction bipolar transistors for millimeter waves applications: trends and achievements. Ann. des Télécommunications 56(1-2): 5-14 (2001) - [j1]Cezary Sydlo, Bastian Mottet, Husin Ganis, Hans L. Hartnagel, Viktor Krozer, Sylvain L. Delage, Simone Cassette, Eric Chartier, D. Floriot, Steven Bland:
Defect detection and modelling using pulsed electrical stress for reliability investigations of InGaP HBT. Microelectron. Reliab. 41(9-10): 1567-1571 (2001)
Coauthor Index
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