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"Reliability investigation of the degradation of the surface passivation of ..."

Clemens Ostermaier et al. (2012)

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DOI: 10.1016/J.MICROREL.2012.06.006

access: closed

type: Journal Article

metadata version: 2020-02-22

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  - journals/mr/OstermaierLAHMAFDSPK12
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  - https://dblp.org/rec/journals/mr/OstermaierLAHMAFDSPK12
Clemens Ostermaier, Peter Lagger, Mohammed Alomari, Patrick Herfurth, David Maier, Alexander Alexewicz, Marie-Antoinette di Forte-Poisson, Sylvain L. Delage, Gottfried Strasser, Dionyz Pogany, Erhard Kohn:
Reliability investigation of the degradation of the surface passivation of InAlN/GaN HEMTs using a dual gate structure. Microelectron. Reliab. 52(9-10): 1812-1815 (2012)

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