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ORCIDTakahiro Mori
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2020 – today
- 2024
[j4]Takumi Inaba, Hiroshi Oka, Hidehiro Asai, Hiroshi Fuketa, Shota Iizuka, Kimihiko Kato, Shunsuke Shitakata, Koichi Fukuda
, Takahiro Mori:
Temperature Dependent Variations of Low-Frequency Noise Sources in Cryogenic Short-Channel Bulk MOSFETs. IEEE Access 12: 12458-12464 (2024)- [c15]Shunsuke Shitakata, Hiroshi Oka, Kimihiko Kato, Takumi Inaba, Shota Iizuka, Hidehiro Asai, Takahiro Mori:
Occurrence and Mitigation of Hot Carrier Degradation in Cryogenic MOSFET Operation. DRC 2024: 1-2 - 2023
- [j3]Hiroshi Oka, Takumi Inaba, Shunsuke Shitakata, Kimihiko Kato, Shota Iizuka, Hidehiro Asai, Hiroshi Fuketa, Takahiro Mori:
Origin of Low-Frequency Noise in Si n-MOSFET at Cryogenic Temperatures: The Effect of Interface Quality. IEEE Access 11: 121567-121573 (2023) - [j2]Shimpei Nishiyama, Kimihiko Kato, Yongxun Liu, Raisei Mizokuchi, Jun Yoneda, Tetsuo Kodera, Takahiro Mori:
Single-Electron Transistor Operation of a Physically Defined Silicon Quantum Dot Device Fabricated by Electron Beam Lithography Employing a Negative-Tone Resist. IEICE Trans. Electron. 106(10): 592-596 (2023) - [j1]Hiroshi Fuketa, Ippei Akita, Tomohiro Ishikawa, Hanpei Koike, Takahiro Mori:
A Cryogenic CMOS Current Integrator and Correlation Double Sampling Circuit for Spin Qubit Readout. IEEE Trans. Circuits Syst. I Regul. Pap. 70(12): 5220-5228 (2023) - [c14]Takahiro Mori:
Silicon Technologies for Quantum Computing. ICICDT 2023: xii - [c13]Takumi Inaba, Hiroshi Oka, Hidehiro Asai, Hiroshi Fuketa, Shota Iizuka, Kimihiko Kato, Shunsuke Shitakata, Koichi Fukuda, Takahiro Mori:
Determining the low-frequency noise source in cryogenic operation of short-channel bulk MOSFETs. VLSI Technology and Circuits 2023: 1-2 - 2022
- [c12]Hiroshi Fuketa, Ippei Akita, Tomohiro Ishikawa, Hanpei Koike, Takahiro Mori:
A Cryogenic CMOS Current Comparator for Spin Qubit Readout Achieving Fast Readout Time and High Current Resolution. VLSI Technology and Circuits 2022: 234-235 - [c11]Hiroshi Oka, Takumi Inaba, Shota Iizuka, Hidehiro Asai, Kimihiko Kato, Takahiro Mori:
Effect of Conduction Band Edge States on Coulomb-Limiting Electron Mobility in Cryogenic MOSFET Operation. VLSI Technology and Circuits 2022: 334-335 - 2021
- [c10]Shota Iizuka, Kimihiko Kato, Atsushi Yagishita, Hidehiro Asai, Tetsuya Ueda, Hiroshi Oka, Junichi Hattori, Tsutomu Ikegami, Koichi Fukuda, Takahiro Mori:
Buried nanomagnet realizing high-speed/low-variability silicon spin qubits: implementable in error-correctable large-scale quantum computers. VLSI Circuits 2021: 1-2
2010 – 2019
- 2015
- [c9]Wataru Mizubayashi, Takahiro Mori, Koichi Fukuda, Yongxun Liu, Takashi Matsukawa, Yuki Ishikawa, Kazuhiko Endo, Shin-ichi O'Uchi, Junichi Tsukada, Hiromi Yamauchi, Yukinori Morita, Shinji Migita, Hiroyuki Ota, Meishoku Masahara:
PBTI for N-type tunnel FinFETs. ICICDT 2015: 1-4 - [c8]Takahiro Mori, Guillermo Enriquez, Huei Ee Yap, Shuji Hashimoto:
Control moment gyroscope for swing motion control. ROBIO 2015: 650-655 - 2014
- [c7]Yasuhiro Minamiyama, Takanori Kiyota, Takahiro Mori, Noboru Sugimoto:
Development of constant torque device and its application to power assist systems. AIM 2014: 192-197 - [c6]Yukinori Morita, Takahiro Mori, Shinji Migita, Wataru Mizubayashi, Koichi Fukuda, Takashi Matsukawa, Kazuhiko Endo, Shin-ichi O'Uchi, Yongxun Liu, Meishoku Masahara, Hiroyuki Ota:
Improvement of epitaxial channel quality on heavily arsenic- and boron-doped Si surfaces and impact on tunnel FET performance. ESSDERC 2014: 182-185 - [c5]Shinji Migita, Takashi Matsukawa, Takahiro Mori, Koichi Fukuda, Yukinori Morita, Wataru Mizubayashi, Kazuhiko Endo, Yongxun Liu, Shin-ichi O'Uchi, Meishoku Masahara, Hiroyuki Ota:
Variation behavior of tunnel-FETs originated from dopant concentration at source region and channel edge configuration. ESSDERC 2014: 278-281 - 2013
- [c4]Yukinori Morita, Takahiro Mori, Shinji Migita, Wataru Mizubayashi, Akihito Tanabe, Koichi Fukuda, Takashi Matsukawa, Kazuhiko Endo, Shin-ichi O'Uchi, Yongxun Liu, Meishoku Masahara, Hiroyuki Ota:
Performance limit of parallel electric field tunnel FET and improvement by modified gate and channel configurations. ESSDERC 2013: 45-48 - [c3]Wataru Mizubayashi, Koichi Fukuda, Takahiro Mori, Kazuhiko Endo, Yongxun Liu, Takashi Matsukawa, Shin-ichi O'Uchi, Yuki Ishikawa, Shinji Migita, Yukinori Morita, Akihito Tanabe, Junichi Tsukada, Hiromi Yamauchi, Meishoku Masahara, Hiroyuki Ota:
Guidelines for symmetric threshold voltage in tunnel FinFETs with single and dual metal gate electrodes. ESSDERC 2013: 202-205 - 2012
- [c2]Takahiro Mori, Ryohei Taketa, Shinsaku Hiura, Kosuke Sato:
Photometric Linearization by Robust PCA for Shadow and Specular Removal. VISIGRAPP (Selected Papers) 2012: 211-224 - [c1]Takahiro Mori, Shinsaku Hiura, Kosuke Sato:
Shadow and Specular Removal by Photometric Linearization based on PCA with Outlier Exclusion. VISAPP (1) 2012: 221-229
Coauthor Index
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