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ORCIDRandy W. Mann
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Journal Articles
- 2020
[j10]Randy W. Mann
, Meixiong Zhao, Oh Sung Kwon, Xi Cao, Sanjay Parihar, Muhammed Ahosan Ul Karim, Jack M. Higman, Joseph Versaggi, Rick Carter:
Bias-Dependent Variation in FinFET SRAM. IEEE Trans. Very Large Scale Integr. Syst. 28(5): 1341-1344 (2020)- 2019
- [j9]Randy W. Mann, Meixiong Zhao, Sanjay Parihar, Qun Gao, Ankur Arya, Carl Radens, Shesh Mani Pandey, Joseph Versaggi, Jack M. Higman, Rick Carter:
An Extrinsic Device and Leakage Mechanism in Advanced Bulk FinFET SRAM. IEEE Trans. Very Large Scale Integr. Syst. 27(8): 1819-1827 (2019) - 2018
- [j8]Bipul C. Paul, Ajey P. Jacob, William Taylor, Randy W. Mann, Joseph Versaggi, Edward J. Nowak, Lars W. Liebmann:
A Retrospective View on the Technology Evolution to Support Low Power Mobile Application. J. Low Power Electron. 14(3): 374-392 (2018) - 2017
- [j7]Randy W. Mann, William McMahon, Yoann Mamy Randriamihaja, Yuncheng Song, Ajay Anand Kallianpur, Sheng Xie, Akhilesh Gautam, Joseph Versaggi, Biju Parameshwaran, Chad E. Weintraub:
Bias-Induced Healing of $V_{\text {min}}$ Failures in Advanced SRAM Arrays. IEEE Trans. Very Large Scale Integr. Syst. 25(2): 660-669 (2017) - [j6]Randy W. Mann, Sandeep Puri, Sheng Xie, Daniel Marienfeld, Joseph Versaggi, Bianzhu Fu, Michael Gribelyuk, Ratheesh R. Thankalekshmi, Xiaoqiang Zhang, Hui Zang, Chad E. Weintraub:
Array Termination Impacts in Advanced SRAM. IEEE Trans. Very Large Scale Integr. Syst. 25(9): 2449-2457 (2017) - 2012
- [j5]Randy W. Mann, Terry B. Hook, Phung T. Nguyen, Benton H. Calhoun:
Nonrandom Device Mismatch Considerations in Nanoscale SRAM. IEEE Trans. Very Large Scale Integr. Syst. 20(7): 1211-1220 (2012) - [j4]Stuart N. Wooters, Adam C. Cabe, Zhenyu Qi, Jiajing Wang, Randy W. Mann, Benton H. Calhoun, Mircea R. Stan, Travis N. Blalock:
Tracking On-Chip Age Using Distributed, Embedded Sensors. IEEE Trans. Very Large Scale Integr. Syst. 20(11): 1974-1985 (2012) - 2003
- [j3]Randy W. Mann, W. W. (Bill) Abadeer, Matthew J. Breitwisch, O. Bula, Jeff S. Brown, Bryant C. Colwill, Peter E. Cottrell, William T. Crocco Jr., Stephen S. Furkay, Michael J. Hauser, Terence B. Hook, Dennis Hoyniak, James M. Johnson, Chung Hon Lam, Rebecca D. Mih, J. Rivard, Atsushi Moriwaki, E. Phipps, Christopher S. Putnam, BethAnn Rainey, James J. Toomey, Mohammad Imran Younus:
Ultralow-power SRAM technology. IBM J. Res. Dev. 47(5-6): 553-566 (2003) - 1995
- [j2]Charles W. Koburger III, William F. Clark, James W. Adkisson, Eric Adler, Paul E. Bakeman, Albert S. Bergendahl, Alan B. Botula, W. Chang, Bijan Davari, John H. Givens, Howard H. Hansen, Steven J. Holmes, David V. Horak, Chung Hon Lam, Jerome B. Lasky, Stephen E. Luce, Randy W. Mann, Glen L. Miles, James S. Nakos, Edward J. Nowak, Ghavam G. Shahidi, Yuan Taur, Francis R. White, Matthew R. Wordeman:
A half-micron CMOS logic generation. IBM J. Res. Dev. 39(1-2): 215-228 (1995) - [j1]Randy W. Mann, Larry A. Clevenger, Paul D. Agnello, Francis R. White:
Silicides and local interconnections for high-performance VLSI applications. IBM J. Res. Dev. 39(4): 403-418 (1995)
Conference and Workshop Papers
- 2017
- [c8]Harsh N. Patel, Benton H. Calhoun, Randy W. Mann:
Soft errors: Reliability challenges in energy-constrained ULP body sensor networks applications. IOLTS 2017: 209-210 - 2015
- [c7]Yoann Mamy Randriamihaja, William McMahon, S. Balasubramanian, Tanya Nigam, Biju Parameshwaran, Randy W. Mann, Torsten Klick, T. Schaefer, A. Kumar, Y. Song, Vivek Joshi, Rakesh Ranjan, F. Chen:
Assessing intrinsic and extrinsic end-of-life risk using functional SRAM wafer level testing. IRPS 2015: 6 - 2014
- [c6]S. Balasubramanian, Vivek Joshi, Torsten Klick, Randy W. Mann, Joseph Versaggi, Akhilesh Gautam, C. Weintraub, G. Kurz, G. Krause, Andreas Kerber, Biju Parameshwaran, Tanya Nigam:
HTOL SRAM Vmin shift considerations in scaled HKMG technologies. CICC 2014: 1-4 - 2011
- [c5]Randy W. Mann, Benton H. Calhoun:
New category of ultra-thin notchless 6T SRAM cell layout topologies for sub-22nm. ISQED 2011: 425-430 - 2010
- [c4]Jiajing Wang, Satyanand Nalam, Zhenyu Qi, Randy W. Mann, Mircea R. Stan, Benton H. Calhoun:
Improving SRAM Vmin and yield by using variation-aware BTI stress. CICC 2010: 1-4 - [c3]Randy W. Mann, Satyanand Nalam, Jiajing Wang, Benton H. Calhoun:
Limits of bias based assist methods in nano-scale 6T SRAM. ISQED 2010: 1-8 - 2009
- [c2]Benton H. Calhoun, Sudhanshu Khanna, Randy W. Mann, Jiajing Wang:
Sub-threshold Circuit Design with Shrinking CMOS Devices. ISCAS 2009: 2541-2544 - 2001
- [c1]Stephen V. Kosonocky, Michael Immediato, Peter E. Cottrell, Terence B. Hook, Randy W. Mann, Jeff Brown:
Enchanced multi-threshold (MTCMOS) circuits using variable well bias. ISLPED 2001: 165-169
Coauthor Index
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