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Chung Hon Lam
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2010 – 2019
- 2016
- [j8]Geoffrey W. Burr, Matthew J. BrightSky, Abu Sebastian, Huai-Yu Cheng, Jau-Yi Wu, SangBum Kim, Norma E. Sosa, Nikolaos Papandreou, Hsiang-Lan Lung, Haralampos Pozidis, Evangelos Eleftheriou, Chung Hon Lam:
Recent Progress in Phase-Change Memory Technology. IEEE J. Emerg. Sel. Topics Circuits Syst. 6(2): 146-162 (2016) - 2013
- [j7]Bryan L. Jackson, Bipin Rajendran, Gregory S. Corrado, Matthew J. Breitwisch, Geoffrey W. Burr, Roger Cheek, Kailash Gopalakrishnan, Simone Raoux, Charles T. Rettner, Alvaro Padilla, Alejandro G. Schrott, Rohit S. Shenoy, Bülent N. Kurdi, Chung Hon Lam, Dharmendra S. Modha:
Nanoscale electronic synapses using phase change devices. ACM J. Emerg. Technol. Comput. Syst. 9(2): 12:1-12:20 (2013) - [j6]Gael F. Close, Urs Frey, Jack Morrish, Richard Jordan, Scott C. Lewis, Tom Maffitt, M. J. BrightSky, Christoph Hagleitner, Chung Hon Lam, Evangelos Eleftheriou:
A 256-Mcell Phase-Change Memory Chip Operating at 2+ Bit/Cell. IEEE Trans. Circuits Syst. I Regul. Pap. 60-I(6): 1521-1533 (2013) - 2011
- [c3]Nikolaos Papandreou, Haralampos Pozidis, Aggeliki Pantazi, Abu Sebastian, Matthew J. Breitwisch, Chung Hon Lam, Evangelos Eleftheriou:
Programming algorithms for multilevel phase-change memory. ISCAS 2011: 329-332 - 2010
- [c2]Nikolaos Papandreou, Aggeliki Pantazi, Abu Sebastian, Matthew J. Breitwisch, Chung Hon Lam, Haralampos Pozidis, Evangelos Eleftheriou:
Multilevel phase-change memory. ICECS 2010: 1017-1020
2000 – 2009
- 2008
- [j5]Geoffrey W. Burr, Bülent N. Kurdi, J. Campbell Scott, Chung Hon Lam, Kailash Gopalakrishnan, Rohit S. Shenoy:
Overview of candidate device technologies for storage-class memory. IBM J. Res. Dev. 52(4-5): 449-464 (2008) - [j4]Simone Raoux, Geoffrey W. Burr, Matthew J. Breitwisch, Charles T. Rettner, Yi-Chou Chen, Robert M. Shelby, Martin Salinga, Daniel Krebs, Shih-Hung Chen, Hsiang-Lan Lung, Chung Hon Lam:
Phase-change random access memory: A scalable technology. IBM J. Res. Dev. 52(4-5): 465-480 (2008) - [j3]Siegfried F. Karg, Gerhard Ingmar Meijer, J. Georg Bednorz, Charles T. Rettner, Alejandro G. Schrott, Eric A. Joseph, Chung Hon Lam, Markus Janousch, Urs Staub, Fabio LaMattina, Santos F. Alvarado, Daniel Widmer, Richard Stutz, Ute Drechsler, Daniele Caimi:
Transition-metal-oxide-based resistance-change memories. IBM J. Res. Dev. 52(4-5): 481-492 (2008) - 2005
- [c1]Matthew J. Breitwisch, Chung Hon Lam, Jeffrey B. Johnson, Steven W. Mittl, Jian W. Zhu:
A novel CMOS compatible embedded nonvolatile memory with zero process adder. MTDT 2005: 9-12 - 2003
- [j2]Randy W. Mann, W. W. (Bill) Abadeer, Matthew J. Breitwisch, O. Bula, Jeff S. Brown, Bryant C. Colwill, Peter E. Cottrell, William T. Crocco Jr., Stephen S. Furkay, Michael J. Hauser, Terence B. Hook, Dennis Hoyniak, James M. Johnson, Chung Hon Lam, Rebecca D. Mih, J. Rivard, Atsushi Moriwaki, E. Phipps, Christopher S. Putnam, BethAnn Rainey, James J. Toomey, Mohammad Imran Younus:
Ultralow-power SRAM technology. IBM J. Res. Dev. 47(5-6): 553-566 (2003)
1990 – 1999
- 1995
- [j1]Charles W. Koburger III, William F. Clark, James W. Adkisson, Eric Adler, Paul E. Bakeman, Albert S. Bergendahl, Alan B. Botula, W. Chang, Bijan Davari, John H. Givens, Howard H. Hansen, Steven J. Holmes, David V. Horak, Chung Hon Lam, Jerome B. Lasky, Stephen E. Luce, Randy W. Mann, Glen L. Miles, James S. Nakos, Edward J. Nowak, Ghavam G. Shahidi, Yuan Taur, Francis R. White, Matthew R. Wordeman:
A half-micron CMOS logic generation. IBM J. Res. Dev. 39(1-2): 215-228 (1995)
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