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Mikko Varonen
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2020 – today
- 2024
- [c11]Md Najmussadat, Y. Tawfik, R. Ahamed, Mikko Varonen, Dristy Parveg, Antti Lamminen, Pekka Pursula, Kari A. I. Halonen:
MMIC Design for Radiometer Receiver at 240 GHz in 0.13 μm SiGe BiCMOS Technology. NorCAS 2024: 1-5 - 2023
- [j4]Md Najmussadat, Raju Ahamed, Mikko Varonen, Dristy Parveg, Mikko Kantanen, Kari A. I. Halonen:
220-240-GHz High-Gain Phase Shifter Chain and Power Amplifier for Scalable Large Phased-Arrays. IEEE Access 11: 23565-23577 (2023) - 2021
- [j3]Sabin Kumar Karki, Mikko Varonen, Mikko Kaunisto, Arto Rantala, Markku Lahti, Antti Lamminen, Jan Holmberg, Mikko Kantanen, Juha Ala-Laurinaho, Ville Viikari:
Beam-Reconfigurable Antenna Based on Vector Modulator and Rotman Lens on LTCC. IEEE Access 9: 52872-52882 (2021) - [c10]Kaisa Ryynänen, Kari Stadius, Andreas Hammer, Mikko Varonen, Henrik Forsten, Tero Kiuru, Ville Viikari, Jussi Ryynänen:
A Compact Low-Power 140-GHz Low-Noise Amplifier with 19-dB Gain and 7-dB NF. ISCAS 2021: 1-5 - 2020
- [c9]Raju Ahamed, Mikko Varonen, Dristy Parveg, Md Najmussadat, Mikko Kantanen, Kari A. I. Halonen:
Design and Analysis of an E-Band Power Detector in 0.13 μm SiGe BiCMOS Technology. ISCAS 2020: 1-4
2010 – 2019
- 2018
- [c8]Md Najmussadat, Raju Ahamed, Dristy Parveg, Mikko Varonen, Kari Halonen:
Design of an E-band Doherty Power amplifier. PRIME 2018: 145-148 - 2017
- [c7]Raju Ahamed, Mikko Varonen, Dristy Parveg, Jan Saijets, Kari Halonen:
Design of high-performance E-band SPDT switch and LNA in 0.13 μm SiGe BiCMOS technology. NORCAS 2017: 1-5 - 2014
- [c6]Ali Vahdati, Mikko Varonen, Mikko Kärkkäinen, Dristy Parveg, Kari Halonen:
A 97-106-GHz differential I-Q phase shifter in 28-nm CMOS. NORCHIP 2014: 1-4 - 2010
- [c5]Dan Sandström, Mikko Varonen, Mikko Kärkkäinen, Kari Halonen:
A W-band 65nm CMOS transmitter front-end with 8GHz IF bandwidth and 20dB IR-ratio. ISSCC 2010: 418-419
2000 – 2009
- 2009
- [j2]Dan Sandström, Mikko Varonen, Mikko Kärkkäinen, Kari A. I. Halonen:
W-Band CMOS Amplifiers Achieving +10 dBm Saturated Output Power and 7.5 dB NF. IEEE J. Solid State Circuits 44(12): 3403-3409 (2009) - [c4]Dan Sandström, Mikko Varonen, Mikko Kärkkäinen, Kari Halonen:
W-band CMOS amplifiers achieving +10dBm saturated output oower and 7.5dB NF. ISSCC 2009: 486-487 - 2008
- [j1]Mikko Varonen, Mikko Kärkkäinen, Mikko Kantanen, Kari A. I. Halonen:
Millimeter-Wave Integrated Circuits in 65-nm CMOS. IEEE J. Solid State Circuits 43(9): 1991-2002 (2008) - 2007
- [c3]Mikko Varonen, Mikko Kärkkäinen, Kari A. I. Halonen:
Millimeter-wave amplifiers in 65-nm CMOS. ESSCIRC 2007: 280-283 - [c2]Mikko Varonen, Mikko Kärkkäinen, Kari A. I. Halonen:
V-band balanced resistive mixer in 65-nm CMOS. ESSCIRC 2007: 360-363 - 2005
- [c1]Mikko Varonen, Mikko Kärkkäinen, Pekka Kangaslahti, Kari Halonen:
Metamorphic HEMT amplifier for K- and Ka-band applications. ECCTD 2005: 253-256
Coauthor Index
aka: Kari A. I. Halonen
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last updated on 2024-11-28 21:26 CET by the dblp team
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