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F. Gámiz

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Journal Articles

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2003
[j5]
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  - journals/mr/GehringJKPGS03
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  - https://dblp.org/rec/journals/mr/GehringJKPGS03
Andreas Gehring, Francisco Jimenez-Molinos, Hans Kosina, A. Palma, F. Gámiz, Siegfried Selberherr:
Modeling of retention time degradation due to inelastic trap-assisted tunneling in EEPROM devices. Microelectron. Reliab. 43(9-11): 1495-1500 (2003)
1998
[j4]
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Juan Bautista Roldán, F. Gámiz, J. A. López-Villanueva, J. E. Carceller:
Monte Carlo Simulation of a Submicron MOSFET Including Inversion Layer Quantization. VLSI Design 6(1-4): 287-290 (1998)
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F. Gámiz, Juan Bautista Roldán, J. A. López-Villanueva:
Monte Carlo Simulation of Non-Local Transport Effects in Strained Si on Relaxed Si_{1 - x}Ge_x Heterostructures. VLSI Design 8(1-4): 253-256 (1998)
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F. Gámiz, Juan Bautista Roldán, J. A. López-Villanueva:
A β-SiC MOSFET Monte Carlo Simulator Including Inversion Layer Quantization. VLSI Design 8(1-4): 257-260 (1998)
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Juan Bautista Roldán, F. Gámiz, J. A. López-Villanueva:
Development of a Method for Determining the Dependence of the Electron Mobility on the Longitudinal-Electric Field in MOSFETs. VLSI Design 8(1-4): 261-264 (1998)

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