"Modeling of retention time degradation due to inelastic trap-assisted ..."

Andreas Gehring et al. (2003)

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DOI: 10.1016/S0026-2714(03)00265-8

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type: Journal Article

metadata version: 2020-02-22

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Andreas Gehring, Francisco Jimenez-Molinos, Hans Kosina, A. Palma, F. Gámiz, Siegfried Selberherr:
Modeling of retention time degradation due to inelastic trap-assisted tunneling in EEPROM devices. Microelectron. Reliab. 43(9-11): 1495-1500 (2003)

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