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2020 – today
- 2024
[c13]M. Millesimo, Claudio Fiegna, Benoit Bakeroot, Matteo Borga, Niels Posthuma, Stefaan Decoutere, Enrico Sangiorgi, Andrea Natale Tallarico:
Analysis of RTN Induced by Forward Gate Stress in GaN HEMTs with a Schottky p-GaN Gate. IRPS 2024: 1-6- 2023
- [c12]Davide Favero
, A. Cavaliere, Carlo De Santi, Matteo Borga, W. Gonçalez Filho, Karen Geens, Benoit Bakeroot, Stefaan Decoutere, Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini:
High- Temperature PBTI in Trench-Gate Vertical GaN Power MOSFETs: Role of Border and Semiconductor Traps. IRPS 2023: 1-6 - 2022
- [c11]Olga Syshchyk, Thibault Cosnier, Zheng-Hong Huang, Deepthi Cingu, Dirk Wellekens, Anurag Vohra, Karen Geens, Pavan Vudumula, Urmimala Chatterjee, Stefaan Decoutere, Tian-Li Wu, Benoit Bakeroot:
Device optimization for 200V GaN-on-SOI Platform for Monolithicly Integrated Power Circuits. ESSDERC 2022: 245-248 - [c10]M. Millesimo, Benoit Bakeroot, Matteo Borga, Niels Posthuma, Stefaan Decoutere, Enrico Sangiorgi, Claudio Fiegna, Andrea Natale Tallarico:
Gate Reliability of p-GaN Power HEMTs Under Pulsed Stress Condition. IRPS 2022: 10 - [c9]Davide Favero, Carlo De Santi, Kalparupa Mukherjee, Karen Geens, Matteo Borga, Benoit Bakeroot, Shuzhen You, Stefaan Decoutere, Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini:
Influence of Drain and Gate Potential on Gate Failure in Semi-Vertical GaN-on-Si Trench MOSFETs. IRPS 2022: 20-1 - 2021
- [c8]Eliana Acurio, Lionel Trojman, Brice De Jaeger, Benoit Bakeroot, Stefaan Decoutere:
ON-state reliability of GaN-on-Si Schottky Barrier Diodes: Si3N4 vs. Al2O3/SiO2 GET dielectric. IRPS 2021: 1-6 - 2020
- [c7]Kalparupa Mukherjee, Carlo De Santi, Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini, Shuzhen You, Karen Geens, Matteo Borga, Benoit Bakeroot, Stefaan Decoutere:
Demonstration of Bilayer Gate Insulator for Improved Reliability in GaN-on-Si Vertical Transistors. IRPS 2020: 1-5
2010 – 2019
- 2019
- [c6]Steve Stoffels, Niels Posthuma, Stefaan Decoutere, Benoit Bakeroot, Andrea Natale Tallarico, Enrico Sangiorgi, Claudio Fiegna, J. Zheng, X. Ma, Matteo Borga, Elena Fabris, Matteo Meneghini, Enrico Zanoni, Gaudenzio Meneghesso, Juraj Priesol, Alexander Satka:
Perimeter Driven Transport in the p-GaN Gate as a Limiting Factor for Gate Reliability. IRPS 2019: 1-10 - 2018
- [c5]Arno Stockman, Eleonora Canato, Alaleh Tajalli, Matteo Meneghini, Gaudenzio Meneghesso, Enrico Zanoni, Peter Moens, Benoit Bakeroot:
On the origin of the leakage current in p-gate AlGaN/GaN HEMTs. IRPS 2018: 4 - 2017
- [c4]Arno Stockman, Michael J. Uren, Alaleh Tajalli, Matteo Meneghini, Benoit Bakeroot, Peter Moens:
Temperature dependent substrate trapping in AlGaN/GaN power devices and the impact on dynamic ron. ESSDERC 2017: 130-133 - 2015
- [j2]Ramses Pierco, Guy Torfs, Jochen Verbrugghe, Benoit Bakeroot, Johan Bauwelinck:
A 16 Channel High-Voltage Driver with 14 Bit Resolution for Driving Piezoelectric Actuators. IEEE Trans. Circuits Syst. I Regul. Pap. 62-I(7): 1726-1736 (2015) - [c3]Tian-Li Wu, Denis Marcon, Brice De Jaeger, Marleen Van Hove, Benoit Bakeroot, Steve Stoffels, Guido Groeseneken, Stefaan Decoutere, Robin Roelofs:
Time dependent dielectric breakdown (TDDB) evaluation of PE-ALD SiN gate dielectrics on AlGaN/GaN recessed gate D-mode MIS-HEMTs and E-mode MIS-FETs. IRPS 2015: 6 - 2014
- [j1]Jie Hu, Steve Stoffels, Silvia Lenci, Nicolo Ronchi, Rafael Venegas, Shuzhen You, Benoit Bakeroot, Guido Groeseneken, Stefaan Decoutere:
Physical origin of current collapse in Au-free AlGaN/GaN Schottky Barrier Diodes. Microelectron. Reliab. 54(9-10): 2196-2199 (2014)
2000 – 2009
- 2008
- [c2]Jordie Buyle, Vincent De Gezelle, Benoit Bakeroot, Jan Doutreloigne:
A new type of level-shifter for n-type high side switches used in high-voltage switching ADSL line-drivers. ICECS 2008: 954-957 - 2007
- [c1]Yogesh Singh Chauhan, François Krummenacher, Renaud Gillon, Benoit Bakeroot, Michel J. Declercq, Adrian M. Ionescu:
A New Charge based Compact Model for Lateral Asymmetric MOSFET and its application to High Voltage MOSFET Modeling. VLSI Design 2007: 177-182
Coauthor Index
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